Abstract:The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic, photonic, and quantum devices and applications. Experimentally, however, the measured piezoelectric responses of nitride semiconductors are far below what theory has predicted. Here, we show that the use of a simple, scalable, post-growth thermal annealing process can dramatically boost the piezoelectric response of ScAlN thin films. We achieve a remarkable 3.5-fold increase in the piezoelectric modulus, d33 for 30% Sc content ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN. The enhancement in piezoelectricity has been unambiguously confirmed by three separate measurement techniques. Such a dramatic enhancement of d33 has been shown to impact the effective electromechanical coupling coefficient kt2 : increasing it from 13.8% to 76.2%, which matches the highest reported values in millimeter thick lithium niobate films but is achieved in a 100 nm ScAlN with a 10,000 fold reduction in thickness, thus promising extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond 5G applications. By utilizing a range of material characterization techniques, we have elucidated the underlying mechanisms for the dramatically enhanced piezoelectric responses, including improved structural quality at the macroscopic scale, more homogeneous and ordered distribution of domain structures at the mesoscopic scale, and the reduction of lattice parameter ratio (c/a) for the wurtzite crystal structure at the atomic scale. Overall, the findings present a simple yet highly effective pathway that can be extended to other material families to further enhance their piezo responses.

Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN

Towards higher electro-optic response in AlScN

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

AlScN: A III-V semiconductor based ferroelectric

Demonstration of Integrated AlScN Photonic Devices on 8-inch Silicon Substrate

Domain control and periodic poling of epitaxial ScAlN

Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

Ferroelectric‐Controllable Optoelectronic Performance in 2D‐Metallic SnSe/Sc0.25Al0.75N Heterostructure

Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films

Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires

CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator

CMOS-compatible, AlScN-based integrated electro-optic phase shifter

Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics