Abstract:Bismuth vanadate (BiVO4) has emerged as a highly prospective material for photoanodes in photoelectrochemical (PEC) water oxidation. However, current limitations with this material lie in the difficulties in producing stable and continuous BiVO4 layers with efficient carrier transfer kinetics, thereby impeding its widespread application in water splitting processes. This study introduces a new fabrication approach that yields continuous, monoclinic nanostructured BiVO4 films, paving the way for their use as photoanodes in efficient PEC water oxidation for hydrogen production under solar light conditions. The fabrication involves the intercalation of vanadium (V) ions into Bi2O3 films at 450oC. Upon interaction with V ions, the film undergoes a transformation from tetragonal Bi2O3 to monoclinic scheelite BiVO4. This synthesis method enables the fabrication of single monoclinic phase BiVO4 films with thicknesses up to 270 nm. The engineered monoclinic BiVO4 film, devoid of any pinholes that could cause carrier loss, exhibits a robust photocurrent of 1.0 mA/cm2 at 1.23 VRHE in a neutral electrolyte, without requiring additional modifications or doping. Moreover, we demonstrate that the incorporation of a cobalt phosphate (Co-Pi) co-catalyst into the BiVO4 photoanode significantly enhances the lifetime of photogenerated holes by a factor of nine, resulting in a further elevation of the photocurrent to 2.9 mA/cm2. This remarkable PEC enhancement can be attributed to the surface state passivation by the Co-Pi co-catalyst. Our fabrication approach opens up a new facile route for producing large-scale, highly efficient BiVO4 photoanodes for PEC water splitting technology.

What problem does this paper attempt to address?

This paper aims to solve several key problems existing in the current BiVO₄ photoanode materials used for hydrogen production by photolysis of water. Specifically: 1. **Stability and Continuity**: At present, the preparation methods of BiVO₄ photoanodes are difficult to produce stable and continuous films, which leads to low carrier transport efficiency and thus affects its application effect in the process of photolysis of water. 2. **Carrier Transport Efficiency**: In the process of photolysis of water, the existing BiVO₄ photoanodes have a low utilization efficiency of photogenerated electron - hole pairs. The main reason is that the electron - hole pairs are prone to recombination at the semiconductor/electrolyte interface (SEI), especially at defect sites or surface - exposed areas. 3. **Light Absorption and Charge Transport**: Traditional methods for preparing BiVO₄ films usually produce films with inhomogeneous structures and limited surface areas, which limit the light absorption and charge transport efficiency and further reduce the water oxidation efficiency. To overcome these problems, this study proposes a new preparation method. By doping vanadium ions (V) into the sputter - deposited Bi₂O₃ films and annealing at 450 °C, the Bi₂O₃ films are transformed into monoclinic scheelite - phase BiVO₄ films. This method can prepare pinhole - free and continuous nanostructured BiVO₄ films, significantly improving the photocurrent density and stability of the photoanode. In addition, the study also found that introducing cobalt phosphate (Co - Pi) as a co - catalyst on the BiVO₄ photoanode can significantly prolong the lifetime of photogenerated holes and further increase the photocurrent density to 2.9 mA/cm². These improvement measures effectively solve the main problems of BiVO₄ photoanodes in the process of photolysis of water and provide a new approach for the development of high - efficiency hydrogen production technology by photolysis of water.

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