Abstract:The emergence of strong relativistic spin-orbit effects in low-dimensional systems provides a rich opportunity for exploring unconventional states of matter. Here, we present a route to realise tunable relativistic band structures based on the lateral patterning of proximity-induced spin-orbit coupling. The concept is illustrated on a patterned graphene-transition metal dichalcogenide heterostructure, where the spatially periodic spin-orbit coupling induces a rich mini-band structure featuring massless and massive Dirac bands carrying large spin Berry curvature. The envisaged systems support robust and gate-tunable spin Hall responses driven by the quantum geometry of mini-bands, which can be tailored through metasurface fabrication methods and twisting effects. These findings open pathways to two-dimensional quantum material design and low-power spintronic applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore how to realize tunable relativistic energy - band structures by designing spin - orbit coupling (SOC) superlattices in two - dimensional van der Waals metamaterials. Specifically, the author proposes a method to achieve this goal through pattern - induced spin - orbit coupling and demonstrates the application of this method in graphene - transition metal dichalcogenide (TMD) heterostructures. ### Main problems and solutions 1. **Introduction of strong relativistic spin - orbit effects**: - The author aims to utilize the strong relativistic spin - orbit effects emerging in low - dimensional systems to explore unconventional matter states. - These effects can generate massless and massive Dirac bands, carrying large spin Berry curvature. 2. **Realization of tunable spin Hall response**: - The proposed system supports a robust and gate - tunable spin Hall response driven by quantum geometry. - This response can be customized through metasurface fabrication methods and torsion effects. 3. **Exploration of new ways in two - dimensional quantum material design**: - The research results open up new paths for the design of two - dimensional quantum materials and low - power spintronics applications. ### Specific research content - **Theoretical model**: The author uses the Weyl - Dirac Hamiltonian to describe the electronic properties of graphene sheets affected by the proximity - induced super - spin - orbit field (SSOF), and takes into account the periodic scalar potential and symmetry - allowed spin - orbit coupling terms. - **Experimental verification**: Research shows that by placing graphene on a patterned substrate with high spin - orbit coupling strength, a long - wavelength - modulated spin - orbit field acting on carriers can be realized. - **Physical phenomena**: The paper shows that these synthesized SSOFs not only lead to the formation of small band gaps but also affect their underlying quantum geometry, producing a variety of useful effects, including linearly dispersive spin - degenerate electronic states. ### Conclusion This research realizes rich physical phenomena in two - dimensional van der Waals metamaterials by designing spin - orbit superlattices with specific symmetries, especially the emergence of massless Dirac fermions and their abnormal electrodynamic responses. This provides new ideas and methods for the design of two - dimensional quantum materials and low - power spintronics applications. ### Formulas involved - Weyl - Dirac Hamiltonian: \[ H_\tau = v (\sigma \cdot p) \otimes s_0 + U(x) \sigma_0 \otimes s_0 + H_{so,\tau}(x) \] - Group velocity correction formula: \[ v_{\hat{k}} \sim v \left(1 - \xi \frac{u^2 \sin^2 \theta_k + \lambda_{KM}^2 \cos^2 \theta_k}{\hbar^2 v^2 G_1^2}\right) \] - Spin Berry curvature formula: \[ \Omega_z^n(k) = - 2\hbar^2 \Im \sum_{m \neq n} \frac{\langle m k | v_x | n k \rangle \langle n k | v_y | m k \rangle}{(\epsilon_{nk} - \epsilon_{mk})^2} \] These formulas are used to describe key physical properties such as the electronic structure, group velocity correction, and spin Berry curvature of the system.

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