Band theory for heterostructures with interface superlattices

Bernhard Putzer,Lucas V. Pupim,Mathias S. Scheurer

2024-07-04

Abstract:Motivated by recent experiments demonstrating the creation of atomically sharp interfaces between hexagonal sapphire and cubic SrTiO$_3$ with finite twist, we here develop and study a general electronic band theory for this novel class of moiré heterostructures. We take into account the three-dimensional nature of the two crystals, allow for arbitrary combinations of Bravais lattices, finite twist angles, and different locations in momentum space of the low-energy electronic bands of the constituent materials. We analyze the general condition for a well-defined crystalline limit in the interface electron system and classify the associated "crystalline reference points". We discuss this in detail for the example of the two-dimensional lattice planes being square and triangular lattices on the two sides of the interface; this reveals non-trivial reference points at finite twist angle and lattice mismatch, leading to a novel form of magic angles, which we refer to as "geometric magic angles". We further show that band structures of mixed dimensionality naturally emerge, where quasi-one- and two-dimensional pockets coexist. Explicit computations for different bulk Bloch Hamiltonians yield a collection of interesting features, such as isolated bands localized at interfaces of non-topological insulators, Dirac cones, van Hove singularities, a non-trivial evolution of the band structures with Zeeman-field, and topological interface bands. Our work illustrates the potential of these heterostructures and is anticipated to provide the foundation for moiré interface design and for the analysis of correlated physics in these systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop and study a general electronic band theory to describe new moiré heterostructures with interface superlattices. Specifically, the author focuses on the situation where atomically sharp interfaces are formed between hexagonal nitrides (such as sapphire) and cubic oxides (such as SrTiO₃), and there is a finite twist angle between these materials. The main objectives of the paper include:

1. **Establish a general theoretical framework**: Develop a general electronic band theory framework for this new type of moiré interface, considering three - dimensional crystal properties, arbitrary Bravais lattice combinations, finite twist angles, and different positions of low - energy electron bands in momentum space.

2. **Analyze the crystalline limit conditions**: Study the general conditions for the formation of well - defined crystalline limits in the interface electron system and classify the associated "crystalline reference points". These reference points determine that under specific conditions, the electron behavior can be approximated as a crystalline state, so that the Bloch theorem can be used to describe the electron bands.

3. **Explore the geometric magic - angle phenomenon**: For the cases where the two - dimensional lattice planes are square and triangular lattices respectively, non - trivial reference points that appear under finite twist angles and lattice mismatches are revealed, leading to a new form of magic angle - "geometric magic angle". These magic angles are different from the magic angles in bilayer graphene studied previously. They are mainly determined by geometric factors rather than depending on the inter - layer tunneling amplitude.

4. **Demonstrate the hybrid - dimensional band structure**: Demonstrate the hybrid - dimensional band structure in which quasi - one - dimensional and two - dimensional pockets coexist naturally in this heterostructure, and verify the existence of these features through specific calculations, such as isolated interface bands, Dirac cones, van Hove singularities, etc.

5. **Provide a design basis**: Provide a theoretical basis for the design of moiré interfaces and the study of related physical phenomena, especially in systems involving correlated physics. These heterostructures have potential application prospects.

In summary, this paper aims to gain in - depth understanding and prediction of the electron behavior in moiré heterostructures with interface superlattices through the development of a general theoretical framework, especially when these structures are composed of different types of Bravais lattices and there is a finite twist angle. This not only helps to explain experimentally observed phenomena but also provides theoretical guidance for the future design of materials with specific electronic properties.