Abstract:Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the performance of microwave - dependent quantum transport characteristics in GaN/AlGaN field - effect transistors (FETs), especially under low - temperature conditions. Specifically, the author focuses on the interaction between defects and quantum electron transport, and explores how these defects affect quantum behavior and their potential applications in quantum sensing and information processing technologies. ### Main problems: 1. **Interaction between defects and quantum transport**: - Traditionally, defects in semiconductors are considered as factors that reduce the performance of electronic devices. However, from the perspective of quantum mechanics, the isolated energy levels introduced by these defects may have unique quantum characteristics and can be used for quantum information processing. - The paper aims to study how these defects affect the quantum transport characteristics in GaN/AlGaN FETs, especially their performance under low - temperature conditions. 2. **Observed phenomena**: - At low temperatures, the author observed the Fano resonance phenomenon, which is an asymmetric line - shape resonance spectrum caused by the interference effect between discrete quantum states and continuous states. - These resonance spectra show dependence on the gate voltage and in - plane magnetic field, indicating that there is a complex interaction between the defect states and the transport paths. 3. **Mechanism explanation**: - To explain the observed phenomena, the author proposed a finite - width Fano interferometer model. This model assumes that the trap sites (caused by impurities or defects) are coupled with the current path, resulting in Fano resonance. - By changing the gate voltage, this coupling can be modulated, thus changing the shape of the resonance spectrum. 4. **Potential applications**: - The research results reveal the potential applications of semiconductor defects in quantum information processing, such as being key components of qubits or high - sensitivity magnetic sensors. - These findings provide new ways for the development of next - generation quantum devices, especially in defect - based qubit manipulation and evaluation of semiconductor device defects. ### Formula: The line shape of Fano resonance can be described by the following formula: \[ F(E)=\frac{(E + q)^{2}}{E^{2}+1} \] where: - \(F\) is the transmission probability, - \(E\) is the normalized energy, expressed as \(\frac{f - f_{0}}{\delta f/2}\), - \(f_{0}\) and \(\delta f\) are the resonance frequency and line width respectively, - \(q\) is the Fano parameter, representing the asymmetry of the resonance peak. Through these studies, the author hopes to gain a deep understanding of the role of defects in quantum transport and provide theoretical and experimental bases for the design of future quantum devices.

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