Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers

Wei Ren,Xi Zhang,Ziyan Zhu,Moosa Khan,Kenji Watanabe,Takashi Taniguchi,Efthimios Kaxiras,Mitchell Luskin,Ke Wang

2024-03-31

Abstract:Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve efficient collimation of electron beams by using gate - defined moiré barriers in twisted bilayer graphene (tBLG). Specifically, the research aims to overcome the following two main experimental challenges:

1. **Improving collimation efficiency**: Traditional charge - density - modulated pn junctions, due to the limitations of their width and height, cause some electrons to undergo non - collimated transmission (such as Veselago refraction), thus reducing the overall collimation efficiency.
2. **Long - distance collimation problem**: Due to the local twist - angle inhomogeneity in actual samples, the ballistic electron trajectories in tBLG may bend during long - distance transmission, making it difficult to maintain the collimated state.

To solve these problems, the researchers utilized the moiré - band - insulator gap in tBLG to define narrow and real tunnel barriers through gates, in order to improve the collimation efficiency, and verified that electrons can still achieve collimated transmission in tBLG in the presence of twist - angle inhomogeneity.

### Key technical means
- **Moiré barrier**: By adjusting the gate voltage, a moiré superlattice bandgap is formed in tBLG, thereby creating a narrow and efficient tunnel barrier.
- **Multi - barrier combination**: Combining traditional pn junctions and moiré barriers achieves more effective electron collimation.
- **Long - distance transmission measurement**: By measuring the transmission characteristics between two consecutive moiré collimators 1 micrometer apart, the effect of electron collimation under actual conditions is verified.

### Main conclusions
- **Improvement in collimation efficiency**: The electron collimation efficiency is significantly improved through the moiré barrier, especially when used in combination with traditional pn junctions.
- **Verification of long - distance collimation**: Despite the local twist - angle inhomogeneity, electrons can still maintain a certain collimated state over a relatively long distance in tBLG.
- **Exploration of microscopic mechanisms**: This research provides new experimental means for further exploring the rich correlated electron states in tBLG.

These results lay the foundation for the future development of advanced quantum - electronic devices based on tBLG and provide important clues for understanding its complex physical phenomena.