Abstract:The inverse spin Hall effect used for detection of spin currents was observed by voltage measurements in bilayers of normal metal (NM)/ferromagnetic metal (FM), using Nb, Mo and Bi as normal metal and Permalloy (Py, Ni$_{81}$Fe$_{19}$) as ferromagnetic metal. The spin current was generated by the spin pumping effect with ferromagnetic resonance. The samples were deposited by dc magnetron sputtering at room temperature on Si (001) substrates. The three bilayers of Nb/Py, Mo/Py and Bi/Py had a spin-orbit coupling large enough to observe the voltage generation by spin Hall effect

What problem does this paper attempt to address?

### The problems the paper attempts to solve This paper aims to study and verify whether the spin current generated by the **Spin Pumping Effect (SPE)** can produce the **Inverse Spin Hall Effect (ISHE)** in the bilayer thin - film structures composed of three normal metals, Nb, Mo and Bi, and the ferromagnetic metal Permalloy (Py, Ni81Fe19). Specifically, the author hopes to confirm the existence of ISHE through experimental measurement of the voltage signals in these bilayer thin films and evaluate the potential of these three normal metals as spin - current detection materials. #### Main problems: 1. **Generation and detection of spin current**: How to generate spin current in non - magnetic metals using the spin pumping effect and convert it into a detectable voltage signal through the inverse spin hall effect. 2. **Exploration of alternative materials**: Since platinum (Pt) is widely used in the research of spin hall effect and inverse spin hall effect but has a high cost, this study attempts to use Nb, Mo and Bi as alternative materials to reduce the cost of future spintronic devices. 3. **Evaluation of material properties**: Evaluate the spin - orbit coupling strength of Nb, Mo and Bi in the bilayer structure and their response characteristics to the spin current, so as to determine whether these materials are suitable for spintronics applications. ### Overview of experimental methods - **Sample preparation**: Deposit Nb, Mo and Bi on a silicon (001) substrate at room temperature by direct - current magnetron sputtering to form Py/Nb, Py/Mo and Py/Bi bilayer thin films with a thickness of 12 nm. - **Spin current generation**: Inject pure spin current into the normal metal layer by making the Py layer undergo ferromagnetic resonance (FMR) using the spin pumping effect. - **Voltage measurement**: Use a nanovoltmeter to measure the transverse voltage signal generated by the inverse spin hall effect. ### Key findings - In all three bilayer structures, a voltage peak caused by ferromagnetic resonance was observed at a magnetic field of about 1.1 kOe, indicating that the inverse spin hall effect was successfully detected. - Nb, Mo and Bi all show sufficient spin - orbit coupling strength and can generate obvious voltage signals under spin - pumping conditions. - These results prove that Nb, Mo and Bi can be used as low - cost spin - current generation and detection materials, providing new options for the development of future spintronic devices. ### Conclusion This study successfully demonstrates the potential application value of Nb, Mo and Bi in spintronics, especially in the replacement of high - cost materials such as platinum. The successful application of these materials is expected to promote the research and development of more cost - effective spintronic devices.

Efecto Hall de espin inverso en peliculas de Nb Mo y Bi por bombeo de espin

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