Exploring Dielectric Properties in Models of Amorphous Boron Nitride

Thomas Galvani,Ali K. Hamze,Laura Caputo,Onurcan Kaya,Simon Dubois,Luigi Colombo,Viet-Hung Nguyen,Yongwoo Shin,Hyeon-Jin Shin,Jean-Christophe Charlier,Stephan Roche

2024-03-19

Abstract:We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) sample sizes to explore the emergence of mid-gap states and its correlation with structural features. Next, by using a simplified tight-binding electronic model, we analyse the dielectric functions for complex three dimensional models (containing about $10.000$ atoms) embedding varying concentrations of ${\rm sp^{1}, sp^{2}}$ and ${\rm sp^3}$ bonds between B and N atoms. Within the limits of these methodologies, the resulting value of the zero-frequency dielectric constant is shown to be influenced by the population density of such mid-gap states and their localization characteristics. We observe nontrivial correlations between the structure-induced electronic fluctuations and the resulting dielectric constant values. Our findings are however just a first step in the quest of accessing fully accurate dielectric properties of as-grown amorphous BN of relevance for interconnect technologies and beyond.

Materials Science,Disordered Systems and Neural Networks

What problem does this paper attempt to address?

The paper discusses the dielectric properties of amorphous boron nitride (aBN). The research team utilized a generated atomic potential energy from machine learning for first-principles simulations and a simplified tight-binding electron model to analyze the dielectric function of large-scale three-dimensional models containing different proportions of sp1, sp2, and sp3 bonds. They found that the zero-frequency dielectric constant is influenced by the density of defect states and their localized characteristics, and observed a nontrivial correlation between structure-induced electronic fluctuations and dielectric constant values. The paper highlights that these findings are an important first step towards accurately determining the dielectric properties of aBN for practical growth, which is crucial for the development of next-generation interconnect technologies, as aBN exhibits ultra-low dielectric constants and excellent mechanical, thermal, and anti-metal migration properties. However, due to the limitations of the methods, the current results are only limited to qualitative trends, and more sophisticated modeling strategies are required for future quantitative predictions.