Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$

Ji-Eun Lee,Shaohua Yan,Sehoon Oh,Jinwoong Hwang,Jonathan D. Denlinger,Choongyu Hwang,Hechang Lei,Sung-Kwan Mo,Se Young Park,Hyejin Ryu

DOI: https://doi.org/10.1021/acs.nanolett.3c03203

2024-03-15

Abstract:Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($\textit{J}$$_{ex}$) and magnetic anisotropy energy to the development of the high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$.

Materials Science