Abstract:A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic doping, electric field, strain, electron interactions, and displacement or twisting of atomic layers. This unparalleled control of the electronic bands has led to the discovery of a plethora of exotic emergent phenomena. But despite its key role, there is currently no versatile method for mapping the local band structure in advanced 2D materials devices in which the active layer is commonly embedded in various insulating layers and metallic gates. Utilizing a scanning superconducting quantum interference device, we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which displays multiple highly-tunable bands. By resolving thermodynamic quantum oscillations spanning over 100 Landau levels in low magnetic fields, we reconstruct the band structure and its controllable evolution with the displacement field with unprecedented precision and spatial resolution of 150 nm. Moreover, by developing Landau level interferometry, we reveal shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially-induced large strain, which leads to pseudomagnetic fields of hundreds of Tesla, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by just 1 millidegree over one {\mu}m distance, two orders of magnitude lower than the typical angle disorder in high-quality twisted bilayer graphene devices. This ability to resolve the local band structure and strain on the nanoscale opens the door to the characterization and utilization of tunable band engineering in practical van der Waals devices.

Unique electronic and optical properties of stacking-modulated bilayer graphene under external magnetic fields

Landau Level Spectrum Of Aba- And Abc-Stacked Trilayer Graphene

Magnetic Oscillation Of Optical Phonon In Aba- And Abc-Stacked Trilayer Graphene

Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Heteromoire Engineering On Magnetic Bloch Transport In Twisted Graphene Superlattices

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Probing band topology in ABAB and ABBA stacked twisted double bilayer graphene

Lattice Relaxation, Mirror Symmetry and Magnetic Field Effects on Ultraflat Bands in Twisted Trilayer Graphene

Stacking transition in bilayer graphene caused by thermally activated rotation

Imaging de Haas-van Alphen quantum oscillations and milli-Tesla pseudomagnetic fields

Dispersions and magnetism of strain-induced pseudo Landau levels in Bernal-stacked bilayer graphene

Electronic and optical properties of graphite-related systems

Unconventional Valley-Dependent Optical Selection Rules and Landau Level Mixing in Bilayer Graphene

The magnetic $Z_2$ topological insulator on the AA-stacked bilayer graphene

Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Stacking-Dependent Optical Conductivity of Bilayer Graphene

Modulation of Magnetic and Electrical Properties of Bilayer Graphene Quantum Dots Using Rotational Stacking Faults*

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

Featuring nuanced electronic band structure in gapped multilayer graphene