Abstract:Bismuth, the heaviest of all group V elements with strong spin-orbit coupling, is famously known to exhibit many interesting transport properties, and effects such as Shubnikov-de Haas and de Haas-van Alphen were first revealed in its bulk form. However, the transport properties have not yet been fully explored experimentally in thin bismuth nor in its 2D limit. In this work, bismuth flakes with average thicknesses ranging from 29 to 69 nm were mechanically exfoliated by a micro-trench technique and were used to fabricate four-point devices. Due to mixing of components, Onsager's relations were used to extract the longitudinal ($R_{xx}$) and Hall ($R_{xy}$) resistances where the latter shows a Hall anomaly that is consistent with the Anomalous Hall Effect (AHE). Our work strongly suggests that that there could be a hidden mechanism for time-reversal symmetry breaking in pure bismuth thin films.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the Anomalous Hall Effect (AHE) observed in thin bismuth films. Specifically, the researchers experimentally explored the electron transport properties of bismuth flakes with thicknesses between 29 and 69 nanometers, especially whether the AHE phenomenon would occur in these flakes. Since bismuth is a highly diamagnetic material and AHE usually does not occur, this finding implies that there may be a mechanism leading to the breakdown of time - reversal symmetry (TRS). This is not only of great significance for understanding the transport properties of bismuth, but also provides a new perspective for in - depth understanding of AHE. ### Background and Problem Description 1. **Anomalous Hall Effect (AHE)** - AHE was discovered by Edwin Hall in 1880, one year later than the ordinary Hall effect. The mechanism of AHE has been a focus of debate for a long time and has only gradually become clear until recently. AHE mainly consists of two contributions: the intrinsic mechanism and the extrinsic mechanism. The intrinsic mechanism is related to Berry curvature, while the extrinsic mechanism is related to impurity scattering. 2. **Properties of Bismuth** - Bismuth is the heaviest element in Group V elements and has a strong spin - orbit coupling (SOC). Although many interesting transport properties have been observed in bulk bismuth, the transport properties in thin bismuth films and in the two - dimensional limit have not been fully explored. 3. **Experimental Motivation** - The researchers prepared bismuth flakes with an average thickness between 29 and 69 nanometers by mechanical exfoliation techniques and measured the longitudinal resistance ($R_{xx}$) and Hall resistance ($R_{xy}$) of these flakes using the four - point probe method. The experimental results showed that AHE was observed in these flakes, which was unexpected because bismuth is a highly diamagnetic material and AHE usually does not occur. ### Experimental Methods 1. **Sample Preparation** - Bismuth crystals were mechanically exfoliated using the micro - groove technique to prepare bismuth flakes with thicknesses between 29 and 69 nanometers. - The flakes were characterized by atomic force microscopy (AFM). - Ti/Au electrodes were deposited using electron - beam lithography (EBL) and electron - beam evaporation techniques. - All preparation steps were completed in a nitrogen glove box or a vacuum environment to avoid the influence of water and oxygen. 2. **Measurement Methods** - The resistance under different magnetic fields was measured using the four - point probe method. - The longitudinal resistance and Hall resistance were separated using the Onsager symmetrization method. ### Results and Discussion 1. **Anomaly of Hall Resistance** - At high magnetic fields, the Hall resistance $R_{xy}$ shows a very small slope, indicating the presence of AHE. - By fitting the data under different magnetic fields, it was found that the linear slope in the low - magnetic - field region is $- 0.174(3)\,\Omega/\text{T}$, and the linear slope in the high - magnetic - field region is $-0.0010(4)\,\Omega/\text{T}$. 2. **Inapplicability of the Multi - Carrier Model** - Since $R_{xx}$ remains constant under different magnetic fields, which does not conform to the characteristics of the multi - carrier model, it is not possible to reliably extract the carrier density and mobility. 3. **Possible Mechanisms** - The researchers speculated that the occurrence of AHE may be due to the topologically non - trivial properties of the surface or edge states, rather than the bulk properties. - Other possible mechanisms include band flattening, orbital magnetism, and strain - induced band distortion. ### Conclusion This study successfully prepared bismuth devices with sub - 100 - nanometer thickness and studied their electron transport properties. The experimental results showed that although bismuth is a highly diamagnetic material, AHE was observed in thin bismuth films. This finding strongly implies that there is some mechanism leading to the breakdown of TRS, which requires further research and understanding. Future work will explore Hall anomalies under higher magnetic fields and different gate voltages to gain a deeper understanding of the electronic band structure of bismuth and its predicted topology.

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