Universal Metallic Surface States in Electride

Dan Wang,Hongxing Song,Leilei Zhang,Hao Wang,Yi Sun,Fengchao Wu,Ying Chen,Xiangrong Chen,Hua Y. Geng

DOI: https://doi.org/10.1021/acs.jpcc.3c07496

2024-02-24

Abstract:Robust metallic surface states (MSS) of topological insulator (TI) against imperfections and perturbations are important in broad applications such as chemical catalysis and quantum computing. Unfortunately, they are suffered from the narrow band gap that can be accessed. Searching for MSS with large bulk band gap beyond conventional TIs becomes a quest. In this work, inspired by the adiabatic connection principle in real space, we identify that all electrides, a new class of emerging materials, must host robust and universal MSS that resists any disturbances, in spite of the fact that some of them could be classified as trivial in standard topology theory. This counterintuitive property is traced to the specific charge localization-delocalization change intrinsic to electride when approaching the crystalline surface or interface, which is a kind of interstice-centered to atom-centered transition in the real-space topology of the charge density distribution, and is sharply different from the band inversion in the standard topology theory. The new mechanism circumvents the obstacle that limits the band gap of TI. Robust and universal MSS in an electride that conventionally-determined as trivial but with a colossal band gap beyond 6.13 eV are demonstrated. This gap size is about 6-fold larger than the highest record of known "wide-gap" TIs, thus opens up new avenues to universal MSS with gigantic bulk gap.

Materials Science,Applied Physics,Chemical Physics,Computational Physics,Quantum Physics

What problem does this paper attempt to address?

This paper mainly investigates the generality and stability of Metal Surface States (MSS) in charge-ion crystals (Electrides). Metal Surface States are important in fields such as chemical catalysis and quantum computation, but they are usually very fragile. Although some materials occasionally possess these states by chance, finding stable MSS with a large bandgap is still a challenge.

The study found that charge-ion crystals always have robust and universal Metal Surface States, even though they are classified as topologically trivial in conventional topological theories. This phenomenon arises from a specific charge localization-delocalization transition near the crystal surface of charge-ion crystals, which is different from the band inversion in traditional topological theories. This new mechanism bypasses the barrier of limited bandgaps in topological insulators and demonstrates charge-ion crystals as a new type of topology beyond the standard theories, opening up new possibilities for MSS with large bandgaps.

Using the principle of adiabatic connection in real space, the researchers demonstrated that all insulators or semimetals in charge-ion crystals necessarily have Metal Surface States, which are caused by partial damage and delocalization of charge ions on the crystal surface. This is different from the concept of traditional topological insulators and atomic insulators with unstable surface states only in specific planes.

The paper investigates several typical charge-ion crystals in detail through first-principles calculations, such as sodium transformed into an insulator under high pressure, as well as Ca3Pb, Cs3O, Y2C, and Sc2C, revealing that robust Metal Surface States exist on different surface terminations and crystal planes independently of surface types in various environmental perturbations, including different layers of electronegativity coverage, point defects, and impurities.

In conclusion, this paper addresses the problem of finding stable Metal Surface States with a large bandgap in charge-ion crystals, revealing the uniqueness of charge-ion crystals in terms of topological properties and surface state formation, and providing new insights for material design and practical applications in related fields.