Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation

Elena Stellino,Beatrice D'Alò,Elena Blundo,Paolo Postorino,Antonio Polimeni
2024-02-07
Abstract:We present a spectroscopic investigation into the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, deduced by the combined analysis of Raman and photoluminescence spectra, revealed a significant variation in the dome's aspect ratio. The modification of the dome shape caused major changes in the mechanical properties of the system resulting in a sizable increase of the out-of-plane compressive strain while keeping the in-plane tensile strain unchanged. The variation of the strain gradients drives a non-linear behavior in both the exciton energy and radiative recombination intensity, interpreted as the consequence of a hybridization mechanism between the electronic states of two distinct minima in the conduction band. Our results indicate that pressure and strain can be efficiently combined in low dimensional systems with unconventional morphology to obtain modulations of the electronic band structure not achievable in planar crystals.
Materials Science
What problem does this paper attempt to address?
This paper attempts to address the problem of finely tuning the exciton response in monolayer WS₂ dome structures through coupled variations of pressure and strain. Specifically, the researchers aim to observe changes in the morphology, mechanical properties, and electronic band structure of WS₂ domes under different pressures, thereby achieving precise control over their optical and electrical properties. ### Main Research Questions: 1. **Morphological Changes**: Investigate the changes in height and base radius of WS₂ domes under different pressures. 2. **Strain Gradient**: Analyze the impact of pressure on the internal and external strain of WS₂ domes. 3. **Electronic Band Structure**: Explore how pressure affects the electronic band structure of WS₂ domes, particularly the changes in exciton energy and radiative recombination intensity. 4. **Optical and Electrical Properties**: Study the modulation effects of pressure on the optical and electrical properties of WS₂ domes using photoluminescence (PL) and Raman spectroscopy techniques. ### Research Background: - **Two-Dimensional Materials**: Since the discovery of graphene, two-dimensional materials have garnered widespread attention due to their unique physical properties, especially their immense potential in electronic device applications. - **Strain Engineering**: Due to the atomic-level thickness of two-dimensional materials, their properties are highly sensitive and can be regulated through various methods (such as pressure, doping, defects, etc.), with strain engineering being considered one of the most effective means. - **WS₂ Domes**: WS₂ domes are a special type of two-dimensional structure formed on the surface of bulk materials through hydrogen ion irradiation. They possess unique morphology and strain distribution, making them an ideal system for studying strain effects. ### Research Methods: - **Experimental Setup**: High pressure is applied using a diamond anvil cell (DAC), combined with micro-Raman spectroscopy and micro-photoluminescence spectroscopy for characterization. - **Data Processing**: By analyzing spectral data, the study investigates the changes in morphology, strain gradient, and electronic band structure of WS₂ domes under different pressures. ### Key Findings: - **Morphological Changes**: With increasing pressure, the height of WS₂ domes significantly decreases, while the base radius remains unchanged. - **Strain Gradient**: Pressure leads to an increase in out-of-plane compressive strain in WS₂ domes, while the in-plane tensile strain remains unchanged. - **Electronic Band Structure**: Strain changes induced by pressure cause nonlinear changes in the electronic band structure, particularly the energy level mixing between the K point and Q point, resulting in an anomalous nonlinear trend in exciton energy and radiative recombination intensity. - **Reversibility**: Upon pressure release, the morphology and optical properties of WS₂ domes fully recover, demonstrating excellent elasticity and stability. ### Conclusion: This study demonstrates that through coupled variations of external pressure and strain, fine-tuning of the electronic band structure in transition metal dichalcogenide (TMD) semiconductors can be achieved, a control method that is difficult to realize in planar monolayer materials. This finding provides new avenues for the research and engineering design of the optical and electrical properties of low-dimensional crystals.