Abstract:Elucidation of the mechanism for optical spin initialization of point defects in solids in the context of quantum applications requires an accurate description of the excited electronic states involved. While variational density functional calculations have been successful in describing the ground state of a great variety of systems, doubts have been expressed in the literature regarding the ability of such calculations to describe electronic excitations of point defects. A direct orbital optimization method is used here to perform time-independent, variational density functional calculations of a prototypical defect, the negatively charged nitrogen-vacancy center in diamond. The calculations include up to 511 atoms subject to periodic boundary conditions and the excited state calculations require similar computational effort as ground state calculations. Contrary to some previous reports, the use of local and semilocal density functionals gives the correct ordering of the low-lying triplet and singlet states, namely ${}^{3}A_2 < {}^{1}E < {}^{1}A_1 < {}^{3}E$. Furthermore, the more advanced meta generalized gradient approximation functionals give results that are in remarkably good agreement with high-level, many-body calculations as well as available experimental estimates, even for the excited singlet state which is often referred to as having multireference character. The lowering of the energy in the triplet excited state as the atom coordinates are optimized in accordance with analytical forces is also close to the experimental estimate and the resulting zero-phonon line triplet excitation energy is underestimated by only 0.15 eV. The approach used here is found to be a promising tool for studying electronic excitations of point defects in, for example, systems relevant for quantum technologies.

Accurate Excitation Energies of Point Defects from Fast Particle-Particle Random Approximation Calculations

Particle-Particle Random Phase Approximation for Predicting Correlated Excited States of Point Defects

Electronic excitations of the charged nitrogen-vacancy center in diamond obtained using time-independent variational density functional calculations

Calculation of the energies of the multideterminant states of the nitrogen vacancy center in diamond with quantum Monte Carlo

Linear Scaling Calculations of Excitation Energies with Active-Space Particle-Particle Random Phase Approximation

Excited state properties of point defects in semiconductors and insulators investigated with time-dependent density functional theory

Vibrational and vibronic structure of isolated point defects: The nitrogen-vacancy center in diamond

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Accurate and convergent energetics of color centers by wavefunction theory

Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Computationally Predicted Electronic Properties and Energetics of Native Defects in Cubic Boron Nitride

The energies and charge and spin distributions in the low-lying levels of singlet and triplet N2V defects in diamond from direct variational calculations of the excited states

Convergence of defect energetics calculations

All-electron $\mathrm{\textit{ab-initio}}$ hyperfine coupling of Si-, Ge- and Sn-vacancy defects in diamond

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

A first principles study of the Stark shift effect on the zero-phonon line of the NV center in diamond

An Ultrafast Shakedown Reveals the Energy Landscape, Relaxation Dynamics, and Concentration of the N3VH0 Defect in Diamond

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Theoretical Calculations of Hyperfine Interactions of the Jahn-Teller Distorted Single Vacancy in Silicon

Fast, efficient, and accurate dielectric screening using a local real-space approach