Abstract:The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hopping and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials.

Extended Hubbard model describing small multi-dot arrays in bilayer graphene

Automated Characterization of a Double Quantum Dot using the Hubbard Model

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

Hubbard Model Description of Silicon Spin Qubits: Charge Stability Diagram and Tunnel Coupling in Si Double Quantum Dots

Two-dimensional Mott-Hubbard Electrons in an Artificial Honeycomb Lattice.

Itinerant magnetism in Hubbard models with long-range interactions

Generic Hubbard model description of semiconductor quantum dot spin qubits

Pairing in the Hubbard Model on the Honeycomb Lattice with Hopping Up to the Third-Nearest-neighbor

Tuning confined states and valley g-factors by quantum dot design in bilayer graphene

Enhanced Pair-Density-Wave Vertices in a Bilayer Hubbard Model at Half Filling

Magnetic Phases of Bilayer Quantum-Dot Hubbard Model Plaquettes

Entanglement and quantum correlations in the honeycomb graphene lattice within the Hubbard model

Quantum theory of the charge stability diagram of semiconductor double quantum dot systems

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Enhanced pair-density-wave vertices in a bilayer Hubbard model at half-filling

Theory of charge stability diagrams in coupled quantum dot qubits

Su-Schrieffer-Heeger-Hubbard model at quarter filling: effects of magnetic field and non-local interactions

Exploring Entanglement Spectrum and Phase Diagram in multi-electron Quantum Dot Chains

An exact solution to the Extended Hubbard Model in 2D for finite size system

Electron dynamics in graphene with gate-defined quantum dots

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