Abstract:The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hopping and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials.

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots

Strongly Interacting Two-Dimensional Dirac Fermions

Electron Transport Through a 1D Chain of Dopant-Based Quantum Dots

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

Two-dimensional Mott-Hubbard Electrons in an Artificial Honeycomb Lattice.

Optical superlattice for engineering Hubbard couplings in quantum simulation

Itinerant magnetism in Hubbard models with long-range interactions

Dipolar quantum solids emerging in a Hubbard quantum simulator

Quantum many-body simulations of the two-dimensional Fermi-Hubbard model in ultracold optical lattices

Simulating the Fermi-Hubbard model with long-range hopping on a quantum computer

Realization of a Rydberg-dressed extended Bose Hubbard model

Direct observation of incommensurate magnetism in Hubbard chains

Quantum simulator of extended bipartite Hubbard model with broken sublattice symmetry: Magnetism, correlations, and phase transitions

Implementation and characterization of the dice lattice in the electron quantum simulator

Studies of the Fermi-Hubbard Model Using Quantum Computing

Trapped-ion quantum simulation of the Fermi-Hubbard model as a lattice gauge theory using hardware-aware native gates

Site-resolved observables in the doped spin-imbalanced triangular Hubbard model

Frustration- and doping-induced magnetism in a Fermi-Hubbard simulator

Quantum simulation of the 1D Fermi-Hubbard model as a $\mathrm{Z}_2$ lattice-gauge theory

Spin and Charge Modulations in a Single-Hole-doped Hubbard Ladder: Verification with Optical Lattice Experiments