Abstract:Heat transfer at the interface between two materials is becoming increasingly important as the size of electronic devices shrinks. Most studies concentrate on the interfacial thermal conductance between either crystalline-crystalline or amorphous-amorphous materials. Here, we investigate the interfacial thermal conductance at crystalline-amorphous interfaces using non-equilibrium molecular dynamics simulations. Specifically, gold and two different materials, silicon and silica, in both their crystalline and amorphous structures, have been considered. The findings reveal that the interfacial thermal conductance between amorphous structures and gold is significantly higher as compared to crystalline structures for both planar and rough interfaces ($\approx$ 152 MW/(m$^2$K) for gold-amorphous silicon and $\approx$ 56 MW/(m$^2$K) for gold-crystalline silicon). We explain this increase by two factors~:~the relative commensurability between amorphous silicon/silica and gold leads to enhanced bonding and cross-correlations of atomic displacements at the interface, contributing to enhance phonon elastic transmission. Inelastic phonon transmission is also enhanced due to the relative larger degree of anharmonicity characterizing gold-amorphous silicon/silica. We also show that all the vibrational modes that participate to interfacial heat transfer are delocalized and use the Ioffe-Regel (IR) criterion to separate the contributions of propagating~(propagons) and non-propagating modes~(diffusons). In particular, we demonstrate that, while at gold-amorphous silicon interfaces elastic phonon scattering involves propagons and inelastic phonon scattering involves a mixture of propagons and diffusons, in gold-amorphous silica, all modes transmitting energy at the interface are diffusons.

What problem does this paper attempt to address?

### Problems the Paper Attempts to Solve This paper aims to investigate the interfacial thermal conductance (ITC) between gold and amorphous silicon and amorphous silica. As the size of electronic devices continues to shrink, heat transfer at interfaces becomes increasingly important. Most studies focus on the interfacial thermal conductance between crystalline-crystalline or amorphous-amorphous materials, while this paper explores the thermal conductance at the interface between crystalline and amorphous materials. Specifically, the researchers used non-equilibrium molecular dynamics (NEMD) simulations to study the interfacial thermal conductance between gold and two different materials (silicon and silica) in both crystalline and amorphous structures. The study found that the interfacial thermal conductance between gold and amorphous structures is significantly higher than that between gold and crystalline structures, regardless of whether the interface is planar or rough (e.g., gold-amorphous silicon is about 152 MW/(m²K), gold-crystalline silicon is about 56 MW/(m²K)). The researchers explained the reasons for this increase, mainly attributing it to two factors: 1. **Relative Matching**: The relative matching between amorphous silicon/silica and gold enhances the bonding and cross-correlation of atomic displacements at the interface, thereby improving phonon elastic transmission. 2. **Enhanced Anharmonicity**: The relatively large anharmonicity between gold and amorphous silicon/silica enhances inelastic phonon transmission. Additionally, the study showed that all vibrational modes involved in interfacial heat transfer are delocalized and used the Ioffe-Regel (IR) criterion to separate propagating modes (propagons) and non-propagating modes (diffusons). Specifically, at the gold-amorphous silicon interface, elastic phonon scattering involves propagons, while inelastic phonon scattering involves a mix of propagons and diffusons; at the gold-amorphous silica interface, all energy-transmitting modes are diffusons. In conclusion, the study calls for systematic experimental determination of the interfacial thermal conductance between amorphous materials and metals to further verify and understand these phenomena.

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