Electron-vacancy scattering in SrNbO$_3$ and SrTiO$_3$: A DFT-NEGF study

Victor Rosendal,Nini Pryds,Dirch Hjorth Petersen,Mads Brandbyge

2024-01-12

Abstract:Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically investigate the influence of O vacancies and also A and B-site vacancies, on the electronic transport as characterised by a scattering cross-section. We consider SrNbO$_3$ and n-type SrTiO$_3$ and contrast results for bulk and thin film (slab) geometries. By varying the electron doping in SrTiO$_3$ we get insight into how the electron-vacancy scattering vary for different experimental conditions. We observe a significant increase in the scattering cross-section (in units of square-lattice parameter, $a^2$) from ca. $0.5-2.5a^2$ per vacancy in SrNbO$_3$ and heavily doped SrTiO$_3$ to more than $9a^2$ in SrTiO$_3$ with 0.02 free carriers per unit cell. Furthermore, the scattering strength of O vacancies is enhanced in TiO$_2$ terminated surfaces by more than 6 times in lowly doped SrTiO$_3$ compared to other locations in slabs and bulk systems. Interestingly, we also find that Sr vacancies go from being negligible scattering centers in SrNbO$_3$ and heavily doped SrTiO$_3$, to having a large scattering cross-section in weakly doped SrTiO$_3$. We therefore conclude that the electron-vacancy scattering in these systems is sensitive to the combination of electron concentration and vacancy location.

Materials Science,Computational Physics

What problem does this paper attempt to address?

This paper mainly discusses the influence of electronic and vacancy scattering in two perovskite oxides, SrNbO3 and SrTiO3. The study combines density functional theory (DFT) with non-equilibrium Green's function (NEGF) method to investigate the effects of O, A, and B site vacancies on electronic transport properties, particularly the sensitivity to changes in electron concentration and vacancy positions. In SrTiO3, by varying the electron doping level, it was found that electron-vacancy scattering increases significantly with decreasing electron concentration, especially under low doping conditions. The scattering cross-sections of Sr and Ti vacancies increase significantly, while the scattering effect of O vacancies is weaker at high doping but becomes stronger at low doping. In addition, the scattering strength of O vacancies on the TiO2 surface is more than 6 times stronger than that in other positions and bulk systems. In contrast, in SrNbO3, although all types of vacancies reduce electronic transport, the scattering effect of Sr vacancies is relatively small. However, in low electron concentration SrTiO3, Sr vacancies become important scattering centers. The paper also points out that the electron-vacancy scattering in SrTiO3 is not only influenced by electron concentration, but also closely related to the vacancy positions. In thin film structures, the scattering properties in different layers are different, especially on the TiO2 surface where the scattering effect of O vacancies is more significant. In summary, this paper aims to address how to understand and quantify the influence of vacancies on electronic transport in perovskite oxides, particularly the differences under different doping levels and thin film structures. These findings are of great importance for understanding and optimizing the performance of electronic devices based on these materials.

Electron-vacancy scattering in SrNbO$_3$ and SrTiO$_3$: A DFT-NEGF study

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