Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene

Yue-Ying Zhou,Yang Zhang,Shihao Zhang,Hao Cai,Ling-Hui Tong,Yuan Tian,Tongtong Chen,Qiwei Tian,Chen Zhang,Yiliu Wang,Xuming Zou,Xingqiang Liu,Yuanyuan Hu,Li Zhang,Lijie Zhang,Wen-Xiao Wang,Lei Liao,Zhihui Qin,Long-Jing Yin

2023-12-21

Abstract:The recent discovery of superconductivity and magnetism in trilayer rhombohedral graphene (RG) establishes an ideal, untwisted platform to study strong correlation electronic phenomena. However, the correlated effects in multilayer RG have received limited attention, and, particularly, the evolution of the correlations with increasing layer number remains an unresolved question. Here, we show the observation of layer-dependent electronic structures and correlations in RG multilayers from 3 to 9 layers by using scanning tunneling microscopy and spectroscopy. We explicitly determine layer-enhanced low-energy flat bands and interlayer coupling strength. The former directly demonstrates the further flattening of low-energy bands in thicker RG, and the later indicates the presence of varying interlayer interactions in RG multilayers. Moreover, we find significant splitting of the flat bands, ranging from ~50-80 meV, under liquid nitrogen temperature when they are partially filled, indicating the emergence of interaction-induced strongly correlated states. Particularly, the strength of the correlated states is notably enhanced in thicker RG and reaches its maximum in the six-layer, validating directly theoretical predictions and establishing abundant new candidates for strongly correlated systems. Our results provide valuable insights into the layer dependence of the electronic properties in RG, paving the way for investigating robust and highly accessible correlated phases in simpler systems.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the layer - number dependence of the electronic structure and related effects in multi - layer rhombic - stacked graphene (Rhombic Graphene, RG). Specifically, through scanning tunneling microscopy and spectroscopy (STM/STS) measurements, the researchers observed the electronic structure and related states in multi - layer RG from 3 to 9 layers and explored the following points:

1. **Effect of layer number on low - energy flat bands**: It was found that as the number of layers increases, the low - energy flat bands become flatter, indicating that in thicker RG, the density of states (DOS) of the low - energy bands is larger, which is conducive to stronger electron - electron interactions.

2. **Change in inter - layer coupling strength**: By analyzing the positions of remote band peaks, the researchers extracted the inter - layer nearest - neighbor coupling strength \( \gamma_0 \), and found that it increases as the number of layers increases, which is consistent with theoretical predictions.

3. **Flat - band splitting under partial filling**: At liquid - nitrogen temperature, when the flat bands are partially filled, the researchers observed significant flat - band splitting, with the splitting energy ranging from approximately 50 to 80 meV, indicating the existence of strongly interaction - induced correlated states.

4. **Layer - number dependence of correlated states**: In particular, it was found that the intensity of the correlated states reaches a maximum in six - layer RG, which directly verifies the theoretical prediction and provides a new candidate material for exploring strongly correlated phenomena.

In summary, through experimental and theoretical calculations, this study systematically reveals the layer - number dependence of the electronic structure and related effects in multi - layer RG, providing important insights for understanding the strongly correlated physics in two - dimensional materials.