Electronic and optical properties of ternary kagome Rb2Ni3S4: a density functional study

Gang Bahadur Acharya,Se-Hun Kim,Madhav Prasad Ghimire

DOI: https://doi.org/10.1088/1361-651X/ad54e1

2024-07-12

Abstract:The application of semiconductors with optical properties has grown significantly in the development of semiconductor photovoltaics. Here, we explore the electronic and optical properties of ternary transition metal sulfide Rb$_{2}$Ni$_{3}$S$_4$ by means of density functional theory. From the structural perspective, Ni atoms are found to form a kagome-like lattice in a two-dimensional plane of Rb$_{2}$Ni$_{3}$S$_4$. From our calculations, Rb$_{2}$Ni$_{3}$S$_4$ is found to be a semiconductor with an indirect band gap of $\sim$0.67 eV. Strong hybridization was observed between the S-3\textit{p} with the Ni-3$d_{xz}$ and Ni-3$d_{yz}$ orbitals. Interestingly, a flat band was noticed below the Fermi level demonstrating one significant feature of kagome lattice. From the optical calculations, Rb$_{2}$Ni$_{3}$S$_4$ is found to exhibit optical activity in both the visible and lower ultraviolet regions of the incident photon energies. The optical response suggests this material may be a potential candidate for opto-electronic device, given its ability to interact with light across a broad range of wavelengths. This work is expected to motivate the experimental group for transport measurements and may provide a new foundation in optics.

Materials Science

What problem does this paper attempt to address?

The paper primarily explores the electronic and optical properties of rubidium nickel sulfide (Rb\_2Ni3S4) through the method of Density Functional Theory (DFT). Specifically, the paper attempts to address the following key issues:

1. **Electronic Structure**:
- Investigate the electronic structure characteristics of Rb\_2Ni3S4 to determine whether it is a semiconductor, as well as the type and size of its band gap.
- Analyze the contribution of various atomic orbitals (such as Ni-3d, S-3p, etc.) to the electronic structure of the material.
- Explore the impact of Ni atoms forming a kagome lattice in the two-dimensional plane, particularly regarding the flat bands near the Fermi level.

2. **Optical Properties**:
- Obtain the complex dielectric function (including real and imaginary parts) of Rb\_2Ni3S4 through DFT calculations, and analyze its optical absorption characteristics.
- Study the optical activity of the material in the visible and near-ultraviolet regions to evaluate its potential as a candidate material for optoelectronic applications.
- Calculate the optical loss function and optical conductivity of the material to further understand its optical response characteristics.

In summary, this paper aims to comprehensively reveal the unique electronic and optical properties of Rb\_2Ni3S4 as a potential optoelectronic material and provides a theoretical foundation for further experimental research.