Abstract:The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman energy $E_\mathrm{Z}$ of this qubit by the tensor $G$ such that $E_\mathrm{Z}=\mu_B\sqrt{\vec{B}^\mathrm{T}G\vec{B}}$ (with $\mu_B$ the Bohr magneton and $\vec{B}$ the magnetic field), and its response to the fluctuator by the derivative $G^\prime$ of $G$ with respect to the fluctuating field. The geometrical nature of the sweet spots on the unit sphere describing the magnetic field orientation depends on the sign of the eigenvalues of $G^\prime$. We show that sweet spots usually draw lines on this sphere. We then discuss how to characterize the electrical susceptibility of a spin-orbit qubit with test modulations on the gates. We apply these considerations to a Ge/GeSi spin qubit heterostructure, and discuss the prospects for the engineering of sweet spots.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to understand and optimize the dephasing sweet spots in spin - orbit qubits to prolong their coherence time and improve their robustness against electrical noise?** Specifically, the paper explores the conditions under which the dephasing time of spin - orbit qubits reaches a maximum under specific bias voltages and/or magnetic field directions. These conditions are called "dephasing sweet spots", that is, under these conditions, the first - order response of the qubit to external electrical noise is zero, so that the dephasing time $T_2^*$ reaches a maximum. ### Main content of the paper 1. **Background and problem description**: - Spin - orbit qubits can be manipulated by electric fields due to strong spin - orbit coupling (SOC), but this also makes them more sensitive to electrical noise and charge noise. - Theory and experiments show that by selecting appropriate bias voltages and magnetic field directions, "dephasing sweet spots" can be found, making the first - order response of the Larmor frequency to electrical noise zero, thereby prolonging the dephasing time. 2. **Theoretical framework**: - Use the g - matrix formalism to describe the effective Hamiltonian of spin qubits. - Introduce Longitudinal Electric Spin Susceptibility (LSES) to characterize the response of the Larmor frequency to electrical perturbations. - Analyze the Zeeman tensor $G$ and its derivative $G'$ to study the geometric properties of the sweet spots. 3. **Geometric properties of sweet spots**: - Sweet spots usually appear as lines (sweet lines) on the unit sphere, depending specifically on the sign of the eigenvalues of $G'$. - For a single electrical noise source, the position of the sweet spot is determined by the equation $b^T G'(0)b = 0$, where $b$ is the unit vector of the magnetic field direction. 4. **Applications and experimental verification**: - Apply the above theory to hole spin qubits in Ge/GeSi heterostructures and discuss the sweet spot positions of quantum dots with different symmetries (such as circular and squeezed shapes). - Analyze the influence of inhomogeneous strain on the sweet spot positions and verify the theoretical predictions through numerical simulations. 5. **Prospects and optimal design**: - Propose to evaluate the robustness of qubits against electrical noise by measuring LSES and help locate the operating sweet spots. - Explore how to achieve longer dephasing times and higher manipulation precision through engineering design. ### Summary This paper aims to theoretically deeply understand the nature of dephasing sweet spots in spin - orbit qubits and verify these theories through specific experimental systems (such as Ge/GeSi heterostructures), thereby providing guidance for the future design of quantum computers and simulators. By optimizing the positions and properties of sweet spots, the coherence time and manipulation precision of qubits can be significantly improved, which is crucial for building stable quantum computers.

Geometry of the dephasing sweet spots of spin-orbit qubits

Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Dynamic sweet spot of driven flopping-mode spin qubits in planar quantum dots

A coherence sweet spot with enhanced dipolar coupling

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Leakage and dephasing in $^{28}$Si-based exchange-only spin qubits

Charge-noise induced dephasing in silicon hole-spin qubits

Geometric Quench and Nonequilibrium Dynamics of Fractional Quantum Hall States

Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Strain engineering in Ge/GeSi spin qubits heterostructures

AC flux sweet spots in parametrically-modulated superconducting qubits

Hole-spin qubits in Ge nanowire quantum dots: Interplay of orbital magnetic field, strain, and growth direction

Controllable single spin evolution at sub-harmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-St{ü}ckelberg-Majorana interference

Role of anisotropic confining potential and elliptical driving in dynamics of a Ge hole qubit

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits

Modelling of planar germanium hole qubits in electric and magnetic fields