Electron-hole collision-limited resistance of gapped graphene

Arseny Gribachov,Vladimir Vyurkov,Dmitry Svintsov

2023-12-08

Abstract:Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its evolution with induction of band gap $E_g$ is less explored. Here, we derive the functional dependence of electron-hole limited resistance of gapped graphene $\rho_{eh}$ on the ratio of gap and thermal energy $E_g/kT$. At low temperatures and large band gaps, the resistance grows linearly with $E_g/kT$, and possesses a minimum at $E_g \approx 2.5 kT$. This contrast to the Arrhenius activation-type behaviour for intrinsic semiconductors. Introduction of impurities restores the Arrhenius law for resistivity at low temperatures and/or high doping densities. The hallmark of electron-hole collision effects in graphene resistivity at charge neutrality is the crossover between exponential and power-law resistivity scalings with temperature.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of electron - hole scattering on resistivity in graphene in the presence of a band gap. Specifically, the author focuses on how the resistivity of graphene changes with the band gap and temperature when a band gap is introduced into graphene, especially near the charge neutrality point (CNP).

### Main problems:
1. **Resistivity limited by electron - hole scattering in gapped graphene**: For clean, gapless graphene, the influence of electron - hole scattering on its resistivity has been widely studied. However, when a band gap is introduced into graphene, how this scattering process evolves is still unclear. The author attempts to derive the functional relationship between the resistivity limited by electron - hole scattering in gapped graphene and the ratio of the band gap to thermal energy, \(\frac{E_g}{kT}\).

2. **Explanation of non - Arrhenius behavior**: At low temperatures and large band - gap conditions, the resistivity increases linearly with \(\frac{E_g}{kT}\) and reaches a minimum at \(E_g\approx 2.5kT\). This behavior is different from the Arrhenius activation behavior in traditional semiconductors. The author hopes to explain this non - Arrhenius behavior through theoretical derivation.

3. **Influence of impurity effects**: The introduction of impurities will restore the Arrhenius law, especially at low temperatures or high doping densities. Therefore, the author also explores the influence of impurities on resistivity, especially their performance under different temperature and band - gap conditions.

### Key findings:
- At low temperatures and large band - gap conditions, the resistivity \(\rho_{eh}\) increases linearly with \(\frac{E_g}{kT}\).
- There is a minimum resistivity point, which appears at \(E_g\approx 2.5kT\).
- The presence of impurities will make the resistivity exhibit Arrhenius behavior, especially at low temperatures or high doping densities.
- By solving the kinetic equation using the variational method, the author obtains an expression for the resistivity limited by electron - hole scattering in gapped graphene.

### Formula summary:
Under large - band - gap conditions, the minimum conductivity \(\sigma_{min}\) can be expressed as:
\[
\sigma_{min}=\frac{8}{\pi}\frac{e^2}{h}\alpha_c^{- 2}\frac{kT}{E_g}
\]
where \(\alpha_c = \frac{e^2}{\hbar v_0}\) is the Coulomb coupling constant, and \(v_0\) is the velocity of massless electrons in graphene.

These results indicate that in gapped graphene, the influence of electron - hole scattering on resistivity has a unique non - exponential dependence, which is different from the traditional Arrhenius behavior. This finding is of great significance for understanding the electrical transport properties of two - dimensional materials with a band gap.