Origin of the Temperature Collapse of the Electric Conductivity in Bilayer Graphene

Mohammad Zarenia,Shaffique Adam,Giovanni Vignale

DOI: https://doi.org/10.1103/PhysRevResearch.2.023391

2020-03-02

Abstract:Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a function of $\mu/k_BT$ (chemical potential scaled with temperature) obtained for different temperatures in the range of $12\rm{K}\lesssim T \lesssim 40\rm{K}$ collapse on a single curve independent of $T$. In a recent theory, this observation has been taken as an indication that the main sub-dominant scattering process is not electron-impurity but electron-phonon. Here we demonstrate that the collapse of the data on a single curve can be explained without invoking electron-phonon scattering, but assuming that the suspended bilayer graphene is not a truly gapless system. With a gap of $\sim 5$ meV, our theory produces excellent agreement with the observed conductivity over the full reported range of temperatures. These results are based on the hydrodynamic theory of conductivity, which thus emerges as a solid foundation for the analysis of experiments and the estimation of the band-gap in multiband systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### The problems the paper attempts to solve

This paper aims to explain the experimental phenomenon of the conductivity of bilayer graphene (BLG) varying with temperature near the charge neutral point. Specifically, it has been experimentally observed that in the temperature range of 12K ≲ T ≲ 40K, when the ratio of the chemical potential μ to the temperature T (μ/kBT) is taken as the abscissa, the conductivity data at different temperatures will collapse into a single curve independent of temperature. This phenomenon is called "temperature collapse".

Previous studies believed that this phenomenon might be the result of electron - phonon scattering domination. However, the authors of this paper propose a new theoretical explanation, believing that the main non - momentum - conserving scattering mechanism is still electron - impurity scattering, rather than electron - phonon scattering. To make this explanation valid, the authors assume that suspended bilayer graphene is not a truly gapless system but has a small gap (about 5 meV). By introducing this small gap, the authors can quantitatively explain the experimentally observed conductivity data without introducing electron - phonon scattering.

### Main contributions

1. **Introducing the small - gap hypothesis**: The authors assume that suspended bilayer graphene has a small gap (about 5 meV) and prove through numerical calculations and theoretical analysis that this hypothesis can well explain the experimental data.

2. **Explaining the temperature - collapse phenomenon**: The authors show that in the presence of a small gap, the intrinsic conductivity σ0(T) acquires a temperature dependence, which exactly cancels out the temperature dependence of the impurity - limited conductivity σdis(T), thus explaining the temperature - collapse phenomenon observed in the experiment.

3. **Verifying the electron - impurity scattering mechanism**: The authors prove that even at low temperatures (T ≲ 40K), electron - impurity scattering is still the main non - momentum - conserving scattering mechanism without introducing electron - phonon scattering.

4. **Providing a theoretical basis**: The authors' work provides a solid theoretical basis for estimating the gap in future experimental samples of multi - band systems, especially in the study of transport properties near the charge neutral point.

### Formula summary

1. **Conductivity expression**:
\[
\frac{\sigma(\mu, T)}{\sigma_0(T)} \simeq 1 + \frac{2\bar{\mu}^2}{\Gamma(T)^2}, \quad \text{where} \quad \bar{\mu} = \frac{\mu}{k_BT}
\]
where \(\sigma_0(T)\) is the intrinsic conductivity caused by electron - hole scattering, and \(\Gamma(T) = \sqrt{\frac{\sigma_0(T)}{\sigma_{\text{dis}}(T)}}\).

2. **Conductivity affected by the gap**:
\[
\sigma_0(\Delta, T) \sim \sigma_0(\Delta = 0) \exp\left(-\frac{\Delta}{2k_BT}\right) \left(1 + \frac{\Delta}{2k_BT}\right)
\]

3. **Carrier density**:
\[
n(\Delta, T) = \int_{\Delta}^{\infty} N(\epsilon) f(\epsilon) d\epsilon, \quad N(\epsilon) = N_0 |\epsilon| \theta(|\epsilon| - \Delta) \sqrt{\epsilon^2 + \left(\frac{\Delta}{2}\right)^2}
\]
where \(f(\epsilon) = \left[\exp\left(\frac{\epsilon}{k_BT}\right) + 1\right]^{-1}\) is the Fermi.