Abstract:Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the conductivity of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. Here we report measurements of quantum transport in strained graphene which agree quantitatively with models based on mechanically-induced gauge potentials. We mechanically induce in-situ a scalar potential, which modifies graphene's work function by up to 25 meV, and vector potentials which suppress the ballistic conductivity of graphene by up to 30 % and control its quantum interferences. To do so, we developed an experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6 %). This work opens many opportunities to experimentally explore quantitative strain effects in 2DM quantum transport and technologies.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to regulate the quantum transport properties of graphene by precisely controlling the mechanical strain in it. Specifically, the authors developed an experimental platform that can apply controllable uniaxial strain to two - dimensional materials (2DMs) at low temperatures and study the effect of this strain on the quantum transport of graphene. ### Main problems and solutions 1. **Precise control and quantification of strain**: - The authors developed an experimental platform that can apply precise uniaxial strain to suspended graphene transistors at low temperatures. - They achieve the application of uniaxial strain by bending an ultrathin silicon substrate and can adjust the strain amount in real - time, with a maximum of 2.6%. 2. **Effect of strain on quantum transport**: - Strain can introduce mechanically - induced scalar potential \(\phi_{\varepsilon}\) and vector potential \(A_i\), and these potential fields will change the work function of graphene and affect its quantum interference. - Through experiments, the authors observed that strain can change the work function of graphene by as much as 25 meV and can suppress the ballistic conductivity by up to 30%. 3. **Verification of theoretical model**: - The experimental results are very consistent with the theoretical model based on mechanically - induced gauge potential, verifying that uniaxial strain can be accurately described by combining scalar and vector gauge potentials. 4. **Mechanical regulation of quantum interference**: - The authors also showed that strain can regulate the quantum interference phase, similar to the Aharonov - Bohm effect, which provides a basis for further research on the application of strain engineering in quantum transport. ### Formula summary - **Change in work function**: \[ \Delta V_D = -\frac{e}{c_G g^2_{\varepsilon}} \left( \frac{\pi (\hbar v_F)^2 (1 - \nu)^2 \varepsilon_{\text{total}}^2}{\pi} \right) \] where \(c_G\) is the capacitance per unit area, \(g_{\varepsilon}\approx3.0 \, \text{eV}\), \(\nu\) is the Poisson ratio (approximately 0.165), and \(\varepsilon_{\text{total}}\) is the total strain. - **Change in resistance**: \[ R \approx \frac{h}{e^2 W} \left( \frac{4}{\pi \tilde{k}_F}-|A_y(\theta)|\right)^{-1} \] where \(\tilde{k}_F\) is the Fermi wave vector and \(A_y(\theta)\) is the average vector potential in the strain direction. ### Conclusion Through this series of experiments and theoretical analyses, the authors demonstrated the great potential of strain engineering in regulating the quantum transport of graphene, providing important experimental evidence and theoretical support for the future development of quantum technologies based on 2DMs.

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