Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Optical response of the bulk stabilized mosaic phase in Se doped TaS$_{2-x}$Se$_{x}$

Hidden CDW States and Insulator-to-metal Transition after a Pulsed Femtosecond Laser Excitation in Layered Chalcogenide 1T-Tas 2− X Se X

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Optical Properties Oftlni2se2: Observation of Pseudogap Formation

A Metallic Mosaic Phase and the Origin of Mott-insulating State in 1T-Tas 2

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Exploring the Charge Density Wave phase of 1$T$-TaSe$_2$: Mott or Charge-transfer Gap?

Superconductivity Induced by Se-doping in Layered Charge-Density-wave System 1T-Tas2−xsex

Suppression of stacking order with doping in 1T-TaS$_{2-x}$Se$_x$

Phase Transformation and Tunable Optoelectrical Properties of Two-Dimensional Layered GaTe 1– x Se x Crystals

From domain walls and the stripe phase to full suppression of charge density wave in the superconducting 1T-Ti$_{1-\text{x}}$Ta$_\text{x}$Se$_2$

Photodoping-modified charge density wave phase transition in WS 2 /1 T -TaS 2 heterostructure

Optically induced symmetry breaking due to nonequilibrium steady state formation in charge density wave material 1T-TiSe2

Phase Transition Photodetection in Charge Density Wave Tantalum Disulfide.

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

Incoherence-to-coherence Crossover Observed in Charge-Density-wave Material 1T-Tise2

Uncovering the nature of transient and metastable non-equilibrium phases in 1$T$-TaS$_2$

Disorder Suppressed Charge-Density-wave and Its Origin in 1T-Tase2-xtex

Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering

Observation and Manipulation of a Phase Separated State in a Charge Density Wave Material.

Exploring control of the emergent exciton insulator state in 1T-TiSe$_2$ monolayer by state-of-the-art theory models