Abstract:Determining the large variation in direct and in‐direct bandgaps of the 2D group‐10 TMD PtSe2 for prospective mid‐infrared and terahertz optoelectronics, and highlighting the number of atomic layers for the semiconductor‐to‐semimetal transition. This is demonstrated through the optical permittivity, the terahertz conductivity and extensive bandstructure simulations, revealing the limits of classic optical extrapolation methods. Unlike traditional group‐6 transition metal dichalcogenides (TMDs), group‐10 TMDs such as PtSe2 and PdTe2 possess highly tuneable indirect bandgaps, transitioning from semiconducting in the near‐infrared to semimetal behavior with a number of monolayers (MLs). This opens up the possibility of TMD‐based mid‐infrared and terahertz optoelectronics. Despite this large potential, the optical properties of such materials have shown an extremely large disparity between that predicted and measured. For example, simulations show that a few MLs is required for the semiconductor–semimetal transition, whilst tens of MLs is found experimentally. This is a result of widely used optical extrapolation methods to determine bandgaps, such as the Tauc plot approach, that are not adapted here owing to i) nearby direct transitions, ii) the material dimensionality and iii) large changes in the non‐parabolic bandstructure with MLs. Here, uniquely combining optical ellipsometry to determine the complex permittivity, terahertz time resolved spectroscopy for the complex conductivity and in‐depth density functional theory (DFT) simulations, it is shown that the optical properties and bandstructure can be determined reliably and demonstrate clearly that the semiconductor‐semimetal transition occurs for PtSe2 layers ≈5 MLs. The microscopic origins of the observed transitions and the crucial role of the Coulomb interaction for thin semiconducting layers, and that of interlayer van der Waals forces for multilayer semimetallic samples are also demonstrated. This work of combining complimentary experimental techniques and extensive simulations avoids the application of constrained extrapolation methods to determine the optical properties of group‐10 TMDs, and will be of importance for future mid‐infrared and terahertz applications.

The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions

Determining Bandgaps in the Layered Group‐10 2D Transition Metal Dichalcogenide PtSe2

Optical properties of thickness-controlled PtSe<sub>2</sub> thin films studied <i>via</i> spectroscopic ellipsometry

Temperature-dependent optical and vibrational properties of PtSe2 thin films

Unified theory of optical absorption and luminescence including both direct and phonon-assisted processes

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Atomically Thin Semiconductor TiPtGe and Heterostructure of -Antimonene/tiptge: A First-Principles Study

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures

Enhanced Broadband Light Absorption of Ultrathin PtSe2 in Metal–insulator–metal Structure

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Momentum-dependent oscillator strength crossover of excitons and plasmons in two-dimensional PtSe2

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction

Giant optical absorption of a PtSe 2 -on-silicon waveguide in mid-infrared wavelengths

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Indirect-to-direct band-gap transition in few-layer -InSe as probed by photoluminescence spectroscopy

Indirect-to-direct bandgap transition in few-layer $β$-InSe as probed by photoluminescence spectroscopy

Single-Layer PtSe2 Adsorbed with Non-Metallic Atoms: Geometrical, Mechanical, Electronic and Optical properties and Strain Effects

Excitonic response in TMD heterostructures from first-principles: impact of stacking, twisting, and interlayer distance

Atomic Layer-controlled Nonlinear Terahertz Valleytronics in Dirac Semi-metal and Semiconductor PtSe2