V. G. M. Duarte,D. R. da Costa,N. M. R. Peres,L. K. Teles,A. J. Chaves
Abstract:Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is whether a band gap can be opened in twisted bilayer graphene (TBG) by applying bias voltage and pressure, and whether highly anisotropic moiré excitons exist in this band - gapped TBG. Specifically:
1. **Band - gap opening**: Using the tight - binding model, the researchers explored the band - gap opening phenomenon in twisted bilayer graphene under the application of pressure and vertical bias voltage. The study found that at certain specific twist angles, TBG with periodic unit cells can be generated, and in this case, the band gap can be opened in the single - particle picture, with a maximum of 200 meV.
2. **Existence of moiré excitons**: Further, through the formalism of semiconductor Bloch equations and solving the corresponding Bethe - Salpeter equation, the researchers showed that this system supports highly anisotropic bright excitons, in which electrons and holes are strongly hybridized between adjacent layers.
### Specific problem description
- **Band - gap regulation**: The paper explored how to regulate the band gap of TBG through external conditions (such as pressure and bias voltage). The research shows that when a vertical bias voltage is applied, the band gap of TBG will be further enlarged, and under certain conditions, the opening of the band gap can be achieved only by pressure or bias voltage.
- **Exciton characteristics**: The study also revealed the existence of highly anisotropic moiré excitons in these band - gapped TBGs. These excitons exhibit six - fold symmetry in momentum space, and their wave functions are located at six non - equivalent points on the optical band edge. In addition, these excitons show strong hybridization between different layers.
### Summary of mathematical formulas
1. **Twist angle formula**:
\[
\theta(p, q)=\arccos\left(\frac{3p^{2}+3pq + q^{2}}{2(3p^{2}+3pq + q^{2})}\right)
\]
where \(p\) and \(q\) are relatively prime positive integers.
2. **Band - gap energy correction**:
\[
\Sigma_{k}=\frac{e^{2}}{S}\sum_{\ell_{1}\ell_{2}}\sum_{GG'}\sum_{q}\psi_{\ell_{1}\ell_{2}}^{GG'}(q)\left[(M_{vv}^{\ell_{1}}(k, q, G'))^{*}M_{vv}^{\ell_{2}}(k, q, G)-(M_{cv}^{\ell_{1}}(k, q, G'))^{*}M_{cv}^{\ell_{2}}(k, q, G)\right]
\]
3. **Optical band structure renormalization**:
\[
(\hbar\omega-\hbar\tilde{\omega}_{k}+i\gamma)p_{cv}(k)+\int\frac{d^{2}q}{(2\pi)^{2}}K(k, q)p_{cv}(q)=d_{vc}(k)\cdot E
\]
4. **Dielectric function**:
\[
\epsilon_{\ell\ell'}^{GG'}(q)=\delta_{\ell\ell'}\delta_{GG'}+\frac{e^{2}}{S}\sum_{\ell''}X_{\ell\ell''}(|q + G|)\sum_{ncnv}\sum_{k}\left[\frac{(M_{ncnv}^{\ell''}(k, q, G))^{*}M_{ncnv}^{\ell'}(k, q, G')}{E_{nck}-E_{nvk + q}}+\frac{(M_{nvnc}^{\ell''}(k, q, G))^{*}M_{nvnc}^{\ell'}(k, q, G')}{E_{nvk}-E_{nck+q}}\right]
\]