Abstract:The long dreamed ‘quantum internet’ would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots (QDs) are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor QDs, or ‘artificial atoms’—namely, the Stranski–Krastanov (SK) and the droplet epitaxy (DE) methods. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, local droplet etching (LDE), as complementary routes to obtain high-quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology.

On the multifaceted journey for the invention of epitaxial quantum dots

Epitaxial growth of quantum dots on van der Waals surfaces

Techniques for epitaxial site-selective growth of quantum dots

Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

Quantum dots: promises and accomplishments

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Droplet Epitaxy for Advanced Optoelectronic Materials and Devices

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Wafer-Scale Epitaxial Modulation of Quantum Dot Density

Advancement in QDs for optoelectronic applications and beyond

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Epitaxially Self‐Assemblied Quantum Dot Pairs

Atom probe composition and in situ electronic structure of epitaxial quantum dot ensembles

Strain-driven quantum dot self-assembly by molecular beam epitaxy

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)