Abstract:Electrostatic doping in materials can lead to various exciting electronic properties, such as metal–insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magneto-resistance but limited carrier transport tunability. Here we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a ∼50-nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov–de Haas oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principle calculations. The present results offer new insights toward nanoelectronic and optoelectronic applications of Dirac semimetals in general and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized. The tunable quantum transport capabilities of cadmium arsenide thin films may unlock new applications for graphene-like semiconductors. Cadmium arsenide has similar electronic properties to graphene, but is easier to work with thanks to its three-dimensional crystal structure. Faxian Xiu of Fudan University in Shanghai and co-workers have now mapped out this material's band structure in confined 50-nanometre-thin film structures. By using a source-drain layout with an unconventional gate electrode — a droplet of ionic electrolyte that electrostatically dopes cadmium arsenide and changes its Fermi level — they saw remarkable conductivity switching behaviour, which is useful for ambipolar field effect transistors. Applying magnetic fields during device operation also revealed the possibility of generating quantum spin Hall effects — the team observed intriguing quantum oscillation conductivity when the Fermi level was pushed into the high-mobility conduction band. Cd3As2, which is known as a topological Dirac semimetal, has been grown on mica substrates by molecular beam epitaxy with high mobility. The temperature-dependent resistance of as-grown Cd3As2 thin films showed semiconducting behavior, indicating the band gap opening as opposed to the bulk counterpart. By solid electrolyte gating, the ambipolar effect and gate-tunable quantum oscillations were clearly demonstrated. These features make the Cd3As2 thin film system a promising platform to observe various exotic phenomena and realize new electronic applications.

Engineering the in-plane anomalous Hall effect in Cd$_3$As$_2$ thin films

Zeeman field-induced two-dimensional Weyl semimetal phase in cadmium arsenide

Theory for Cd$_3$As$_2$ thin films in the presence of magnetic fields

In-Plane Anomalous Hall Effect in -Symmetric Antiferromagnetic Materials

Observation of Planar Hall Effect in the Topological Insulator NaCd4As3

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3as2 Nanoplates

Thickness-dependent quantum oscillations in Cd3As2 thin films

Anomalous nematic-to-stripe phase transition driven by in-plane magnetic fields

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

Weak Antilocalization in Cd3as2 Thin Films

Quantum Anomalous Hall Effect And Gate-Controllable Topological Phase Transition In Layered Eucd2as2

Large Hall Angle-Driven Magneto-Transport Phenomena In Topological Dirac Semimetal Cd3as2

An ideal candidate for observing anomalous Hall effect induced by the in-plane magnetic field

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

Quantum Hall effect based on Weyl orbits in Cd3As2

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Gate-tunable Quantum Oscillations in Ambipolar Cd3As2 Thin Films

Giant Nonlinear Anomalous Hall Effect Induced by Spin-Dependent Band Structure Evolution

Ferromagnetic phase transition in topological crystalline insulator thin films: Interplay of anomalous Hall angle and magnetic anisotropy

Quantum Hall Effect Originated from Helical Edge States in Cd3As2

Observation of an Odd-Integer Quantum Hall Effect from Topological Surface States in Cd_{3}As_{2}.