Large Hall Angle-Driven Magneto-Transport Phenomena In Topological Dirac Semimetal Cd3as2

Yong Zhang,Cheng Zhang,Hongxiang Gao,Yanwen Liu,Xiaoyang Liu,Faxian Xiu,Xufeng Kou
DOI: https://doi.org/10.1063/1.5037789
IF: 4
2018-01-01
Applied Physics Letters
Abstract:We report the electrical transport properties of topological Dirac semimetal Cd3As2. Unlike the ordinary Hall resistance with linear slope and the parabolic magnetoresistance (MR) in conventional semiconductors, the linear-band dispersion in this system give rise to a high electron mobility of 3.4 x 10(4) cm/V s and a giant linear MR exceeding 5 x 10(3) % at 2.1 K. More importantly, the large Hall angle-induced phenomena can be captured by applying a generic two-band magneto-transport model on both the Hall and MR data, and the fitting results are consistent over the entire temperature range from 2.1K to 350 K. Furthermore, the large-Hall-angle condition also enables the observation of distinct quantum oscillations with non-trivial band topology of the Cd3As2 sample at low temperatures. Our work provides a general approach to investigate the high-mobility topological Dirac semimetals and their potential applications. Published by AIP Publishing.
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