Abstract:Due to the high surface–to–volume ratio in nanostructured components and devices, thermal transport across the solid–solid interface strongly affects the overall thermal behavior. Materials such as Si, Ge, SiO2 and GaAs are widely used in advanced semiconductor devices. These materials may have differences in both crystal structure and Debye temperature. We have shown that the thermal transport across such interfaces can be improved by inserting an interlayer between the two confining solids. If the two confining solids are similar in crystal structure and lattice constant but different in Debye temperature, it is predicted from the molecular dynamics modeling that an over 50% reduction of the thermal boundary resistance can be achieved by inserting a 1– to 2–nm–thick interlayer which has similar crystal structure and lattice constant as the two solids. In this case, the Debye temperature of the optimized interlayer is approximately the square root of the product of the Debye temperatures of the two solids. However, if the interlayer has large lattice mismatches with the two confining solids, a thin disordered layer is formed in the solid and in the interlayer adjacent to their interface. Such a disordered layer can distort the phonon density of states at the interface and strongly affects the interfacial phonon transport. In this case, it is found that a 70% reduction of the thermal boundary resistance can be achieved if the lattice constant of the interlayer is smaller than that of the two solids and the Debye temperature of the interlayer is approximately the average of the Debye temperatures of the two solids. On the other hand, if the two solids have a large difference in both lattice constant and Debye temperature, the optimized interlayer should have a lattice constant near the average of the lattice constants of the two solids. For this case, an over 60% reduction of the thermal boundary resistance can be achieved if the Debye temperature of the interlayer is equal to or slightly higher than the square root of the product of the Debye temperatures of the two solids. The calculated phonon density of states shows that the distorted phonon spectra induced by large lattice mismatches are generally broader than the phonon spectra of the corresponding undistorted case. The broader interfacial phonon spectra increase the overlap between the phonon spectra of the two solids at the interface which leads to improved thermal boundary transport.

Non-equilibrium Thermal Resistance of Interfaces Between III-V Compounds

Nonequilibrium thermal resistance of interfaces between III-V compounds

Phonon Scattering of Interfacial Strain Field Between Dissimilar Lattices

Prediction and Measurement of Thermal Transport Across Interfaces Between Semiconductor and Adjacent Layers

Phonon non-equilibrium effects on interface thermal resistance between graphene and substrates

Interfacial Thermal Conductance at Metal–nonmetal Interface Via Electron–phonon Coupling

Effect of Lattice Mismatch on Phonon Transmission and Interface Thermal Conductance Across Dissimilar Material Interfaces

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Inelastic Phonon Transport Across Atomically Sharp Metal/semiconductor Interfaces

Phonon dynamic behaviors induced by amorphous interlayer at heterointerfaces

Non-equilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Interfacial Thermal Conductance Across Metal-Insulator/Semiconductor Interfaces Due To Surface States

Thermal Boundary Conductance Across Metal-Nonmetal Interfaces: Effects of Electron-Phonon Coupling both in Metal and at Interface

Effect of Interlayer Between Semiconductors on Interfacial Thermal Transport

Interface Thermal Conductivities Induced by Van Der Waals Interactions

Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers

Giant Interfacial Thermal Resistance Arising From Materials With Mismatched Phonon Structures

Boltzmann Transport Equation Simulation of Phonon Transport Across GaN/AlN Interface

Simulation Study of Phonon Transport at the GaN/AlN Superlattice Interface: Ballistic and Non-Equilibrium Phenomena

A comparative study of interfacial thermal conductance between metal and semiconductor