Abstract:Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities.

Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots

Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

Fast high-fidelity spin readout in the singlet-triplet basis using a resonator and tailored pulses

Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

A singlet-triplet hole-spin qubit in MOS silicon

Triplet-singlet relaxation in semiconductor single and double quantum dots

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Single-shot readout of multiple donor electron spins with a gate-based sensor

A low-disorder Metal-Oxide-Silicon double quantum dot

Dynamically corrected gates in silicon singlet-triplet spin qubits

Single-Shot Readout of a Solid-State Electron Spin Qutrit

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %

Sensing dot with high output swing for scalable baseband readout of spin qubits

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%

Coherent electron transport in silicon quantum dots

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Electrical single spin read-out using an exchange-coupled quantum dot

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Valley splitting of single-electron Si MOS quantum dots