Abstract:Low Gain Avalanche Detectors(LGADs) is one of the candidate sensing technologies for future 4D-tracking applications and recently have been qualified to be used in the ATLAS and CMS timing detectors for the CERN High Luminosity Large Hadron Collider <a class="link-external link-http" href="http://upgrade.LGADs" rel="external noopener nofollow">this http URL</a> can achieve an excellent timing performance by the presence of an internal gain that improves the signal-to-noise ratio leading to a better time resolution. These detectors are designed to exhibit a moderate gain with an increase of the reverse bias voltage. The value of the gain strongly depends on the temperature. Thus, these two values must be kept under control in the experiments to maintain the gain within the required values. A reduction in the reverse bias or an increase in the temperature will reduce the gain significantly. In this paper, a mechanism for gain suppression in LGADs is going to be presented. It was observed, that the gain measured in these devices depends on the charge density projected into the gain layer, generated by a laser or a charged particle in their bulk. Measurements performed with different detectors showed that ionizing processes that induce more charge density in the detector bulk lead to a decrease in the detector's measured gain. Measurements conducted with IR-laser and Sr-90 in the lab, modifying the charge density generated in the detector bulk, confirmed this mechanism and will be presented here.

A new Low Gain Avalanche Diode concept: the double-LGAD

Design of AC-coupled Low Gain Avalanche Diodes (Ac-Lgads): a 2D TCAD Simulation Study

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

A Two-Dimensional Characterization of Low-Gain Avalanche Diodes for Low-LET Microdosimetry

Design and development of Low Gain Avalanche Detectors using Teledyne e2v process

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

The Double Gate Lateral Inversion Layer Emitter Transistor - A Novel Power Device Concept with A Dynamic Emitter

Gain suppression mechanism observed in Low Gain Avalanche Detectors

Development of the strip LGAD detector with double-end readout for future colliders

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Design and testing of LGAD sensor with shallow carbon implantation

Beam Test Results of NDL Low Gain Avalanche Detectors (LGAD)

Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

Optimization of capacitive coupled Low Gain Avalanche Diode (AC-LGAD) sensors for precise time and spatial resolution

A New Double Epitaxial Layer Dielectric Isolation Technology For Hvics

Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling