Fabrication and Characterization of Graphene-Barium Titanate-Graphene layered capacitors by spin coating at low processing temperatures

M.S. Habib,S.F.U. Farhad,N.I. Tanvir,M.S. Alam,M. N. A. Bitu,M.S. Islam,S. Islam,N. Khatun,M. S Hossain
2023-06-18
Abstract:Barium titanate, BaTiO3 (BT), materials have been synthesized by two different routes: one ball-mill-derived (BMD) nanopowder and another precursor-derived (PCD) BT synthesis method were used separately to fabricate BT thin films on stainless steel (SS) and quartz substrates by spin coating. Then thin films from both synthesis routes were characterized by Ultraviolet-Visible-Near Infrared (UV-Vis-NIR) Spectroscopy, Field-Emission Scanning Electron Microscopy (FE-SEM), X-ray Diffractometry (XRD), Raman Spectroscopy, and Four-point collinear probe; all carried out at room temperature. Our studies revealed that the PCD synthesis process did not produce the BT phase even under the 900^0C air-annealing condition. In contrast, a homogeneous BT thin film has been formed from the BMD-BT nanopowder. The optical band gap of BMD-BT thin films was found in the 3.10 - 3.28 eV range. Finally, a Graphene-Barium Titanate-Graphene (G-BT-G) structure was fabricated on a SS substrate by spin coating at processing temperatures below 100^0C and characterized by two different pieces of equipment: a Potentiostat/Galvanostat (PG-STAT) and a Precision Impedance Analyzer (PIA). The G-BT-G structure exhibited a capacitance of 8 nF and 7.15 nF, a highest dielectric constant of 800 and 790, and a low dielectric loss of 4.5 and 5, investigated by PG-STAT and PIA equipment, respectively.
Applied Physics,Materials Science
What problem does this paper attempt to address?
The paper attempts to address the issue of improving the energy storage density of dielectric materials. Specifically, the authors prepared barium titanate (BaTiO₃, abbreviated as BT) films using two different synthesis methods (ball milling and precursor method) and combined them with graphene to construct a novel graphene-barium titanate-graphene (G-BT-G) layered capacitor. The main objectives of the study include: 1. **Improving energy storage density**: Currently, the energy storage density of dielectric materials is relatively low. Therefore, the researchers aim to enhance the energy storage capacity by optimizing the material structure and preparation process. 2. **Preparing high-performance capacitors with low-temperature processing**: Traditional high-temperature processing methods may lead to material performance degradation or equipment damage. Thus, the researchers attempt to prepare high-performance G-BT-G capacitors at temperatures below 100°C. 3. **Validating the effects of different synthesis methods**: Comparing the performance of BT films prepared by ball milling and precursor methods to determine which method is more suitable for preparing high-performance dielectric materials. 4. **Characterizing and analyzing material properties**: Detailed studies of the optical, electrical, and structural properties of BT films and G-BT-G structures using various characterization techniques (such as UV-Vis-NIR spectroscopy, field emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and four-point probe measurements). Through these studies, the authors hope to develop a new type of capacitor with high capacitance, high dielectric constant, and low dielectric loss, thereby playing an important role in the field of energy storage and conversion.