Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

Maria-Andromachi Syskaki,Takaaki Dohi,Sergei Olegovich Filnov,Sergey Alexeyevich Kasatikov,Beatrice Bednarz,Alevtina Smekhova,Florian Kronast,Mona Bhukta,Rohit Pachat,Johannes Wilhelmus van der Jagt,Shimpei Ono,Dafiné Ravelosona Ramasitera,Jürgen Langer,Mathias Kläui,Liza Herrera Diez,Gerhard Jakob

2023-06-16

Abstract:The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper primarily explores the issue of modulating Interlayer Exchange Coupling (IEC) through the magneto-ionic effect in Synthetic Antiferromagnets (SyAFMs). Specifically, the study focuses on the following key points:

1. **Background and Motivation**: Electric field control of magnetism is a promising method for achieving energy-efficient applications, especially in the storage field. In recent years, there has been increasing interest in the study of the magneto-ionic effect in synthetic antiferromagnets due to its potential for realizing high-density storage devices with very low power consumption. However, the mechanism by which the magneto-ionic effect influences interlayer exchange coupling remains unclear.

2. **Research Objectives**: This paper aims to identify and understand how the magneto-ionic effect influences the top ferromagnetic layer of synthetic antiferromagnets and subsequently drives changes in interlayer exchange coupling. The study particularly focuses on how this effect manifests when the top ferromagnetic layer is in contact with high ion mobility oxides.

3. **Main Findings**:
- Successfully identified that the magneto-ionic effect can significantly modulate the properties of the top ferromagnetic layer in synthetic antiferromagnets, which plays a crucial role in regulating interlayer exchange coupling.
- Discovered a non-monotonic behavior of interlayer exchange coupling with varying ferromagnetic layer thickness, revealing the complex interaction between the stack structure and the magneto-ionic field effect on magnetic properties.
- These findings are essential for understanding the relationship between structure and magnetic properties in synthetic antiferromagnetic thin film systems.

In summary, the goal of this paper is to delve into the specific mechanisms by which the magneto-ionic effect impacts interlayer exchange coupling in synthetic antiferromagnets. Through experimental and theoretical analysis, it provides key insights that are significant for the design and development of future efficient spintronic devices.