Abstract:The main goal of this research was to determine the key reagents during the highly Si3N4/SiO2 selective etching. The experiments were conducted, where both Si3N4 and SiO2 samples were etched by NF3/O2 and NF3/O2/N2/H2 plasmas. The sources of the plasmas were removed from the etched sample to exclude a damaging from UV emission and ion bombardment. Optical emission spectroscopy and mass-spectroscopy were used during the etching. The reaction mechanisms were studied using quantum chemistry methods. It was suggested analytical models, which quantitively describe dependence of Si3N4 and SiO2 etch rate on the fluxes of key reactants in NF3/O2 and NF3/O2/N2/H2 downstream plasmas. The densities of the kye reagents were measured and calculated using plasma simulation. Thus, the Si3N4 etch rate curve in NF3/O2 mixture has a peak, where NO density peaks. The high and narrow Si3N4/SiO2 selectivity peaks, which appears in NF3/O2/N2/H2, correlates with high and narrow density peak of vibration excited HF(v1) molecule. Also, this research was aimed to study a mechanism of precursor formation of boron nitride nanotubes growth during high temperature synthesis. It was shown that boron consumption (it is the main impediment to large scale production) occurs through the reactions of N2 dissociative adsorption on small boron clusters (N2 fixation) resulting in generation of B4N4 and B5N4 chains. The liquid boron is only source of the small boron clusters. A subsequent formation of longer chains occurs via collisions of B4N4 and B5N4 with each other. It was also shown that slow gas cooling rate and high pressure enhance liquid boron consumption during the synthesis, creating a good condition to large scale production of high purity and quality BNNT.

What problem does this paper attempt to address?

The paper attempts to address two main issues: 1. **High Selectivity Etching of Silicon Nitride (Si3N4) and Silicon Dioxide (SiO2)**: - The paper investigates how to achieve high selectivity Si3N4/SiO2 etching through a remote plasma source (RPS). Specifically, the authors explore the optimal conditions for etching using NF3/O2 and NF3/O2/N2/H2 plasmas, as well as the role mechanisms of key reactants such as NO and F atoms. - Using quantum chemical methods, the authors developed a mechanism for Si3N4 etching and identified the key reagents for selective etching. Additionally, an analytical model was established to describe the relationship between etching rate and reactant flow rate. 2. **Large-Scale Production of High-Quality Boron Nitride Nanotubes (BNNTs)**: - The paper studies the synthesis process of BNNTs, particularly the fixation process of N2 molecules and its impact on boron consumption. Through theoretical calculations and experimental data, the authors reveal the reaction mechanism of N2 molecules with small boron clusters (Bm) at high temperatures. - The authors propose a mechanism for the N2 fixation process, which determines the boron consumption rate. The study finds that high pressure, low initial boron fraction, and low gas cooling rate are conducive to the large-scale production of BNNTs. ### Specific Goals and Tasks: 1. **Experimental Research**: - Conduct experimental research on the high selectivity Si3N4/SiO2 etching process using NF3/O2 and NF3/O2/N2/H2 plasmas. - Measure the density of radicals and molecules in the plasma to verify the accuracy of the model. 2. **Quantum Chemical Modeling**: - Develop a mechanism for Si3N4 etching using quantum chemical methods, identify the key reagents for selective etching, and calculate the rate constants of surface reactions. - Establish an analytical model to describe the relationship between the etching rates of Si3N4 and SiO2 and the reactant flow rate. 3. **Study of the N2 Fixation Process**: - Investigate the reaction mechanism of N2 molecules with small boron clusters, identifying key factors affecting boron consumption. - Determine the composition of B/N2 mixtures at different temperatures through thermodynamic calculations, providing theoretical support for the synthesis of BNNTs. ### Main Innovations: 1. **Discovery that NO and F atoms are key reagents for Si3N4 etching**, where NO can enhance Si3N4 etching without affecting SiO2. 2. **First discovery that vibrationally excited HF(v) molecules can induce high selectivity Si3N4 etching without a catalyst**. 3. **Proposed a mechanism for the reaction of N2 molecules with small boron clusters at high temperatures**, which determines the boron consumption rate, providing a theoretical basis for the large-scale production of BNNTs. ### Practical and Scientific Value: 1. **High Selectivity Si3N4 Etching Technology**: The etching technology and mechanism proposed in the paper can be applied to high selectivity etching in semiconductor manufacturing, improving process efficiency and product quality. 2. **Large-Scale Production of BNNTs**: The research results provide theoretical and technical support for the large-scale production and application of BNNTs, potentially promoting technological advancements in related fields. Overall, this paper has significant scientific and practical value in the fields of semiconductor manufacturing and nanomaterial synthesis.

Plasma processes affecting etching and growth of nitride materials

Characterization of plasma and gas-phase chemistry during boron-nitride nanomaterial synthesis by laser-ablation of boron-rich targets

Insight into BN Impurity Formation during Boron Nitride Nanotube Synthesis by High-Temperature Plasma

Determining Gas Composition for Growth of BNNTs Using Thermodynamic Approach

Boron nitride nanotube precursor formation during high-temperature synthesis: kinetic and thermodynamic modelling

Boron nitride nanotube growth via boron oxide assisted chemical vapor transport-deposition process using LiNO3 as a promoter

Synthesis and characterization of boron nitride powders produced under concentrated light

Surface Growth of Boron Nitride Nanotubes Through Boron Source Design

Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

Computational study of boron nitride nanotube synthesis: How catalyst morphology stabilizes the boron nitride bond

Electron Cyclotron Resonance Plasma-Assisted Pulsed Laser Deposition of Boron Carbon Nitride Films

Root-Growth of Boron Nitride Nanotubes: Experiments and \textit{Ab Initio} Simulations

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Nitridation Of Silicon With Ammonia And Nitrogen

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Energy fluxes in a radio-frequency magnetron discharge for the deposition of superhard cubic boron nitride coatings

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Highly efficient synthesis of boron nitride nanotubes by catalytic chemical vapor deposition of boron/nickel containing precursors