Engineering the directionality of hot carrier tunneling in plasmonic tunneling structures

Mahdiyeh Abbasi,Shusen Liao,Yunxuan Zhu,Douglas Natelson
DOI: https://doi.org/10.1063/5.0150891
2023-05-31
Abstract:Tunneling metal-insulator-metal (MIM) junctions can exhibit an open-circuit photovoltage (OCPV) response under illumination that may be useful for photodetection. One mechanism for photovoltage generation is hot carrier tunneling, in which photoexcited carriers generate a net photocurrent that must be balanced by a drift current in the open-circuit configuration. We present experiments in electromigrated planar MIM structures, designed with asymmetric plasmonic properties using Au and Pt electrodes. Decay of optically excited local plasmonic modes preferentially creates hot carriers on the Au side of the junction, leading to a clear preferred directionality of the hot electron photocurrent and hence a preferred polarity of the resulting OCPV. In contrast, in an ensemble of symmetric devices constructed from only one Au, polarity of the OCPV has no preferred direction.
Mesoscale and Nanoscale Physics,Optics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to control the tunneling directionality of hot carriers by designing the asymmetric plasmonic characteristics in the metal - insulator - metal (MIM) tunnel structure. Specifically, the researchers hope that through this asymmetric design, a hot - electron tunneling current with a definite directionality can be generated under light irradiation, thereby achieving a controllable open - circuit photovoltage (OCPV). This is helpful for the development of new - type high - performance photodetectors and energy - harvesting devices. ### Main problems of the paper 1. **Control of hot - carrier tunneling direction**: - In a symmetric MIM structure, since the two electrode materials are the same or similar, the generated hot carriers do not have a definite tunneling direction, resulting in a random polarity of OCPV. - By introducing materials with different plasmonic characteristics (such as Au and Pt), can the directional control of hot - carrier tunneling direction be achieved? 2. **Improvement of photoelectric response performance**: - How to use the plasmonic effect to enhance the generation and tunneling efficiency of hot carriers, thereby improving the response speed and sensitivity of the photodetector? - The researchers hope to verify whether the plasmon - induced hot - carrier tunneling in the MIM structure at the sub - nanometer scale can significantly increase the magnitude of OCPV. ### Experimental design and results - **Experimental design**: The researchers designed and fabricated an asymmetric MIM structure composed of gold (Au) and platinum (Pt), and formed a sub - nanometer gap through electromigration. - **Experimental results**: - In the asymmetric Au - Pt MIM structure, the OCPV generated under illumination has a definite polarity, and the polarity is always negative, indicating that hot electrons mainly tunnel from the Au side to the Pt side. - Compared with the pure gold (Au) device, the latter shows a random OCPV polarity under similar conditions, further proving the decisive role of plasmonic characteristics in the tunneling direction of hot carriers. ### Key formulas - **Conductance quantum**: \[ G_0=\frac{2e^2}{h} \] where \(e\) is the electron charge and \(h\) is the Planck constant. - **Relationship between conductivity and distance**: \[ G = G_0\exp(-\beta(d - d_0)) \] where \(G\) is the conductivity, \(\beta\) is the attenuation factor, \(d\) is the gap distance, and \(d_0\) is the lattice constant. ### Conclusion This research successfully demonstrates that by designing the asymmetric plasmonic characteristics in the MIM structure, the tunneling direction of hot carriers can be effectively controlled, thereby achieving an OCPV with a definite polarity. This result provides new design ideas and technical means for plasmonic optoelectronic devices on future integrated chips.