Enhancing Hot Carrier Photoelectric Efficiency through the Boosted Collection of Hot Holes via Au/ZrO2/Si Tunneling Junctions

Hongyan Yin,Can Zhang,Quanzhen Zhang,Pu Wang,Jianguo Tang,Sui Mao

DOI: https://doi.org/10.1021/acs.jpclett.4c02021

2024-09-26

Abstract:Metallic nanoparticles can generate photoexcited hot carriers on the femtosecond scale under light excitation, which holds immense significance for applications such as optical communication and ultrafast imaging. In this study, a tunnelling junction structure with ZrO2 as the dielectric layer is designed and fabricated to achieve efficient hot hole collection between Au nanoparticles and P-type Si. Through characterizations of photoconductive atomic force microscopy, the electrical transition from an ohmic contact to a tunneling junction is confirmed, and the transfer pathway of Au hot holes to P-type Si upon 520 nm excitation is clearly observed. The impact of the tunneling structure on device performance is investigated through the fabrication of Si/ZrO2/Au/TiO2 photodiodes. The performance tests show that hot hole collection by the tunneling effect significantly enhances a range of parameters, e.g., external quantum efficiency by 250%. Noticeably, the external quantum efficiency attributed to photogenerated hot carriers under 520 nm excitation is estimated to exceed 2.5%. Moreover, the transient photoresponse of the photodiodes is examined with a typical rising time of less than 20 ns.