Phase I/II study of low-dose intravenous OKT3 and subcutaneous interleukin-2 in metastatic cancer.

J. Buter,R. Janssen,A. Martens,D. Sleijfer,L. de Leij,N. Mulder

DOI: https://doi.org/10.1016/0959-8049(93)90044-G

IF: 10.002

European Journal of Cancer

Abstract:

What problem does this paper attempt to address?

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from P-Si/zno Nanoemitters.

Zhizhen Huang,Yifeng Huang,Ningsheng Xu,Jun Chen,Juncong She,Shaozhi Deng

DOI: https://doi.org/10.1021/acsami.8b00140

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., < 1000 K) is less temperature sensitive due to the weak dependence of free electron density on temperature, while that from p-doped semiconductor emitter is restricted by its limited free electron density. Here, we developed full array of uniform individual p-Si/ZnO nanoemitters and demonstrated the strong thermo-enhanced field emission. The mechanism of forming uniform nanoemitters with well Si/ZnO mechanical joint in the nanotemplates was elucidated. No current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.
Enhanced hot-electron injection across Au/GaN heterojunction by the piezo-phototronic effect for efficient sub-bandgap photodetection

Yuqing Yang,Yicheng Xie,Yue Ling,Zexin Dong,Peishan Li,Shishi Liu,Shuti Li,Shuanghong Wu,Xingfu Wang

DOI: https://doi.org/10.1016/j.nanoen.2024.109322

IF: 17.6

2024-01-22

Nano Energy

Abstract:Performances of plasmon mediated optoelectronic devices are mainly limited by the hot carrier injection efficiency in metal-semiconductor plasmonic heterojunctions. Herein, the piezo-phototronic effect was used to promote hot-electron injection in Au/GaN plasmonic heterojunction, and the dynamics of hot-electron transport were investigated. The lateral and vertical Au/GaN plasmonic heterojunction devices were fabricated based on freestanding GaN film. The comparisons of hot-electron transport behaviors and photoresponse performances between lateral and vertical Au/GaN plasmonic heterojunction devices for sub-bandgap photodetection were systematically investigated. The photoresponse current of vertical heterojunction device is three orders of magnitude higher than lateral heterojunction device owing to the shortened electron transport path. The height of Schottky barrier at the heterojunction interface was tuned by the piezo-phototronic effect to enhance the injection efficiency of hot-electron. Optimized by the piezo-phototronic effect, the photoresponse current increases by nearly 89% under an applied compressive strain of 0.57% and the hot-electron injection efficiency was increased from 37.50% to 90.45%. The manipulating dynamic transport process of hot-electron under the regulation of applied strain is further confirmed by using transient absorption (TA) spectral measurement. This work provides a new architecture for efficient sub-bandgap photodetection based on GaN, and provides insight into the hot-electron dynamics in metal–semiconductor heterostructures.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Interface Engineering on ZnO/Au Based Schottky Junction for Enhanced Photoresponse of UV Detector with TiO2 Inserting Layer

Xin Zheng,Yihui Sun,Haiying Qin,Zhenguo Ji,Hongzhong Chi

DOI: https://doi.org/10.1016/j.jallcom.2019.152537

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:Metal-oxide semiconductor ZnO shows enormous potential in the field of photoelectric detection. However, the adsorption of H2O/O2 on its surface unavoidably results in degradation in the photoresponse. Herein, Au–TiO2–ZnO (ATZ) ultraviolet (UV) photodetectors were designed to benefit the photosensing performance by weaken the surface state effect through tuning the Schottky junction interface with TiO2 insertion layer. As expect, 97% enhancement of IPh response together with three orders of magnitude decrease of dark current was triggered. This enhancement is owing to the efficiently separation and extraction of photoexcites under the effect of the stronger and expanding built-in field, which is a result of reduction of space charge density in barrier region induced by inhibiting H2O/O2 adsorption at the ZnO/Au interface. These findings here provide a promising method to boost performances of optoelectronic devices by interface engineering and could be extended to other semiconductor devices.
Hot Electrons in Electrically Driven Plasmonic Nanorod Metamaterials (conference Presentation)

Pan Wang,Alexey V. Krasavin,Mazhar E. Nasir,Wayne Dickson,Anatoly V. Zayats

DOI: https://doi.org/10.1117/12.2306693

2018-01-01

Abstract:Nonequilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to excitation by optical illumination, such hot carriers can also be generated due to electron tunnelling, a quantum-mechanical effect which allows the transport of electrons across a nanoscale junction between two conducting electrodes. Here we study electron tunnelling effects in electrically-driven plasmonic nanorod metamaterials containing up to 10^11 tunnel junctions per square centimeters and show that the generation of hot electrons makes the tunnel junctions highly reactive, facilitating strongly confined chemical reactions which can in turn modulate the tunnelling processes. To form nanometer scale gaps for electron tunneling, an overgrown plasmonic nanorod metamaterial (Au nanorod assembly electrochemically grown in a substrate-supported, thin-film porous aluminum oxide template) was first ion-milled at an oblique angle (75º with respect to the normal to the sample surface) to make the embedded Au nanorods ~1 nm shorter than surrounding aluminum oxide. Then, a droplet of eutectic gallium and indium (EGaIn) was added onto the sample surface working as an upper electrode, forming millions of ~1-nm air gaps between the Au nanorod tips and the EGaIn. When a low voltage (2.5 V) was applied between the Au nanorods and the EGaIn, a strong light emission was observed from the substrate side (~ 4 mm2 in size) due to the radiative decay of plasmonic modes excited in the nanorod metamaterial by inelastic tunnelling electrons. With an increasing applied bias, the intensity of emission increases gradually, and is accompanied by a blue-shift of the cutoff wavelength (the energies of the emitted photons are always less than the energy of tunnelling electrons). Apart from the excitation of plasmons and photons by the inelastic tunnelling electrons, hot electrons are generated simultaneously in the tips of Au nanorods by the elastic tunnelling electrons while leaving hot holes in the EGaIn. The large flux of energetic hot electrons makes the otherwise inert tunnel junctions highly reactive, facilitating the oxidation and reduction reactions in the junctions involving O2 and H2 molecules, respectively. These reactions are monitored either optically by changes in the intensity of light emission (~50%) resulting from the radiative decay of tunnelling-generated surface plasmons, or electrically via tunnelling current variations (~10%). Electrically-driven plasmonic nanorod metamaterial with reactive tunnel junctions comprises a fertile platform merging photonics, electronics and chemistry at the nanoscale, opening up opportunities for developing electron tunnelling-based devices, such as sensors, light sources, nanoreactors, modulators and photodetectors.
Plasmonic hot-hole injection combined with patterned substrate for performance improvement in trapezoidal PIN GaN microwire self-powered ultraviolet photodetector

Kai Chen,Congcong Deng,Can Zou,Zixuan Zhao,Qing Liu,Xingfu Wang,Longfei He,Fangliang Gao,Wei Zhao,Shuti Li,Kai Chen,Congcong Deng,Can Zou,Zixuan Zhao,Qing Liu,Xingfu Wang,Longfei He,Fangliang Gao,Wei Zhao,Shuti Li

DOI: https://doi.org/10.1016/j.nanoen.2022.107926

IF: 17.6

2022-12-15

Nano Energy

Abstract:Harvesting nonequilibrium carriers from plasmonic-metal nanostructures offers unique strategies for improving the performance of various photodetectors. Most studies have focused on the capture and conversion of plasmonic hot-electron. Here, we report a hot-hole injection enhanced self-powered UV photodetector based on trapezoidal PIN GaN microwire modified with Au nanoparticles (NPs) on patterned sapphire substrate. Efficient injection of hot holes and enhanced light scattering of plasmonic Au NPs combined with patterned substrate that increases the light absorption of the device considerably improve the performance of the photodetector. The responsivity at 325 nm reaches up to 1.9 A W−1, with an ideal detectivity at 5.25 × 1011 Jones without a power supply, which is well beyond the photodetectors without Au NPs modification on flat substrate. Moreover, our device also has a high on/off ratio (∼3 ×105) and fast response speed (rise/fall time of 0.25/0.38 ms). This work demonstrates potential applications, such as energy-saving communication, environmental monitoring and self-powered integrated systems and provides guidance for subsequent photodetectors that operate by hot-hole collection.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Bidirectional 10 Gb/s coherent WDM-PON with colorless ONUs and extended reach

Qi Guo,A. Tran

DOI: https://doi.org/10.1364/OECC_PS.2013.TUPP_6

2013-06-30

Abstract:We demonstrate a bidirectional 10 Gb/s WDM-PON with 100 km reach and REAM-based ONUs using heterodyne detection. The proposed network can support 640 customers at the rate of 1.25 Gb/s via TDM hybrid.
Enhanced transfer efficiency of plasmonic hot-electron across Au/GaN interface by the piezo-phototronic effect

Yu Zhu,Congcong Deng,Chenguang He,Wei Zhao,Zhitao Chen,Shuti Li,Kang Zhang,Xingfu Wang

DOI: https://doi.org/10.1016/j.nanoen.2021.106845

IF: 17.6

2022-03-01

Nano Energy

Abstract:Performances of plasmon-mediated optoelectronic devices are mainly limited by the transfer efficiency of the energetic hot electrons (QEHET) from metallic nanostructures into the semiconductor active region. Here, we report a novel strategy to enhance the efficiency of plasmon-induced hot-electron transfer (PHET) across Au nanoparticles (NPs)/GaN film via the external-strain-induced piezo-phototronic effect. By performing transient absorption (TA) spectrum measurement of the Au NPs/GaN freestanding membrane under different strain conditions, the enhancement of effective QEHET is estimated to be nearly 120% under 3.57% compressive straining. This enhancement is comparable or better than previously reported achievement using other methods such as controlling the material’s morphology or optimizing charge-transfer transition pathway. The mechanisms of the piezo-phototronic enhanced PHET rely on the modulated barrier height between Au NPs/GaN heterojunction. This was further confirmed by performing the photoresponse ability measurements in Au NPs/GaN film under external straining. Photoresponsivity of the plasmonic heterojunction is obviously increased/decreased when the hybrid membrane undergoes compressive/tensile strain. These results advance our understanding of the piezo-phototronic effect on QEHET in plasmonic heterostructures, and offer effective strategies to manipulate hot carrier dynamics for high-performance plasmonic devices and photoelectrochemical systems.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Cu2O@Au-CsPbI3 heterostructures for plasmon hot carrier transfer enhanced optoelectronics

Xinhong Zhao,Jixiang Dong,Yongchu Fang,Jinyu Dai,Jiahuan Chen,Xiaoxian Song,Zhendong Fu,Wenbao Sun,Quan Wang,Zaoxue Yan

DOI: https://doi.org/10.1016/j.jallcom.2024.173644

IF: 6.2

2024-04-01

Journal of Alloys and Compounds

Abstract:Plasmon hot carrier devices have tremendous potential applications in broadband photovoltaics, photodetection, photocatalysis, and intelligent optoelectronics, as they have the ability to generate hot carriers with energy lower than the optical bandgap at Schottky junctions and broaden the spectral range. However, this is mostly challenged by the lack of effective methods for the separation, migration, and extraction of plasmon hot carrier. In this work, a Cu2O@Au-CsPbI3 heterostructure was fabricated using facile low-temperature solution synthesis and spin-coating technique. The proposed heterostructure benefits from the simultaneous transfer of plasmon hot holes to Cu2O and hot electrons to CsPbI3, as well as enhanced charge separation driven by the built-in electric field at the p-n heterojunction interface. The heterostructure realizes remarkably enhanced light absorption, reduces carrier recombination, and further improves conversion efficiency. It exhibits a wide spectrum response of ultraviolet-visible-near infrared and achieves enhanced photodetection performance. The results suggest that Cu2O@Au-CsPbI3 heterostructure is a promising candidate for optoelectronic devices based on the harvesting of plasmonic hot carriers.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Great Enhancement of Self‐Powered Photoresponse Performance of C 3 H 8 NSi‐TiO 2 NRAs/n‐Si Heterojunction by Build‐In and Build‐Out Electric Field Jointly Promoting Carrier Separation

Zhidong Hou,Guixia Li,Cuicui Ling,Hongyan Wang,Lei Zhu,Tianchao Guo,Tuo Zhang,Bingxin Feng,Min Cao,Qingzhong Xue

DOI: https://doi.org/10.1002/aelm.202000501

IF: 6.2

2020-07-19

Advanced Electronic Materials

Abstract:A novel silane coupling agent grafting TiO2 nanorod arrays (C3H8NSi‐TiO2 NRAs)/n‐Si heterojunction is introduced. A built‐out electric field is created on the surface of TiO2 NRAs by silane coupling agent modifications, which can promote photo‐generated carriers separation so that the C3H8NSi‐TiO2 NRAs/n‐Si heterojunction shows excellent self‐powered broadband photoresponse properties. Especially under 900 nm illumination, the self‐powered device demonstrates the responsivity (R ), detectivity (D* ), and sensitivity (S ) of ≈7.76 A W−1, ≈5.22 × 1014 Jones, and ≈1.12 × 1010 cm2 W−1, respectively. Compared with that of the unmodified TiO2 NRAs/n‐Si heterojunction, the R , D* , and S are increased by two orders of magnitude. The results are mainly ascribed to the original built‐in electric field of heterojunction and the created built‐out electric field which jointly promote carriers separation and the unconventional porous electrode which plays a crucial role in collecting holes. The DFT calculations and TRPL results indicate the formation and carriers separation capability of the built‐out electric field. This design concept can be extended to the application of other varieties of metal oxide based photoelectric devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Enhancing Hot-Electron Photodetection of a TiO2/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure

Wenyan Wang,Cheng Zhang,Kaifang Qiu,Guohui Li,Aiping Zhai,Yuying Hao,Xiaofeng Li,Yanxia Cui

DOI: https://doi.org/10.3390/ma15082737

IF: 3.4

2022-04-08

Materials

Abstract:Hot-electron photodetectors (HEPDs) are triggering a strong surge of interest in applications of image sensors and optics communication, since they can realize photoelectric responses when the incident photon energy is lower than the bandwidth of the semiconductor. In traditional HEPD systems, the metal layers are dressed with regular gratings, which can only excite plasmonic resonance over a narrow bandwidth, limiting the hot-electron photoelectric effect. To break this limitation, hybrid plasmonic nanostructures should be applied in HEPDs. Here, we propose a TiO2 based HEPD device incorporated with a hybrid plasmonic nanostructure, which consists of Au nanoparticles (Au NPs) and a conformal transparent Au film. With the assistance of the plasmonic resonances excited in this hybrid nanostructure, the spectrum of the photocurrent response is significantly broadened from the UV band to the visible and near-infrared (NIR) ranges. It is demonstrated that at the wavelengths of 660 nm and 850 nm, the photocurrent in the hybrid HEPD device is enhanced by 610% and 960%, respectively, compared with the counterparts without the addition of Au NPs. This work promotes the development of high performances HEPDs, offering an alternative strategy for realizing photodetection and image sensing in the NIR range.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Thermo-enhanced Field Electron Emission by Bandto-Ban Tunneling from P-Si/zno Nano-Emitters

Zhizhen Huang,Yifeng Huang,Ningsheng Xu,Jun Chen,Juncong She,Shaozhi Deng

DOI: https://doi.org/10.1109/ivnc.2018.8520213

2018-01-01

Abstract:We fabricated full array of uniform individual pSi/ZnO nano-emitters and demonstrated the strong thermoenhanced field emission. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 K to 623 K. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nano-junction. This work provides promising cathode for portable x-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.
Ultrafast Studies of Hot-Hole Dynamics in Au/p-GaN Heterostructures

Giulia Tagliabue,Joseph S. DuChene,Mohamed Abdellah,Adela Habib,Yocefu Hattori,Kaibo Zheng,Sophie E. Canton,David J. Gosztola,Wen-Hui Cheng,Ravishankar Sundararaman,Jacinto Sa,Harry A. Atwater

DOI: https://doi.org/10.1038/s41563-020-0737-1

2018-10-10

Abstract:Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast dynamics of hot electrons, to date, the temporal evolution of hot holes in metal-semiconductor heterostructures remains unknown. An improved understanding of the carrier dynamics in hot-hole-driven systems is needed to help expand the scope of hot-carrier optoelectronics beyond hot-electron-based devices. Here, using ultrafast transient absorption spectroscopy, we show that plasmon-induced hot-hole injection from gold (Au) nanoparticles into the valence band of p-type gallium nitride (p-GaN) occurs within 200 fs, placing hot-hole transfer on a similar timescale as hot-electron transfer. We further observed that the removal of hot holes from below the Au Fermi level exerts a discernible influence on the thermalization of hot electrons above it, reducing the peak electronic temperature and decreasing the electron-phonon coupling time relative to Au samples without a pathway for hot-hole collection. First principles calculations corroborate these experimental observations, suggesting that hot-hole injection modifies the relaxation dynamics of hot electrons in Au nanoparticles through ultrafast modulation of the d-band electronic structure. Taken together, these ultrafast studies substantially advance our understanding of the temporal evolution of hot holes in metal-semiconductor heterostructures and suggest new strategies for manipulating and controlling the energy distributions of hot carriers on ultrafast timescales.

Mesoscale and Nanoscale Physics
Structurally Unraveling the Photocarrier Behavior of Cu 2 O/ZnO Heterojunction Photodetectors

Shen Zhong,Da Xiong,Binbin Zhang,Xiao Yang,Tao Yang,Guo Tian,Hongrui Zhang,Weiqing Yang,Weili Deng

DOI: https://doi.org/10.1021/acsphotonics.1c01490

IF: 7

2022-01-05

ACS Photonics

Abstract:Photoelectric conversion in a semiconductor is the basis of photodetectors (PDs), so unraveling the photocarrier behavior is essential for designing and enhancing the performance of PDs. Herein, we experimentally uncover the generation and transport behavior of the photocarrier in the self-powered Cu2O/ZnO heterojunction PDs. The thickness of the functional layer is proved to be a major factor in determining the photocarrier generation and transport, namely, the increase in the number of photocarriers with the prolongation of the functional layer, while the transport of the carrier is impeded by the increase in the internal defects and becomes the degrading factor. By tuning the length of the ZnO nanorods, the structurally designed PD exhibits high responsivity of 45.74 mA/W under 450 nm light illumination at 0 V bias, which is 5.75 times larger than that of the quasi-planar one. Moreover, the PD presents a fast response speed (rise time of 5.5 ms and decay time of 5.9 ms) and long-term stability, showing only 3% degradation of the photocurrent after 30 days in the air. This work provides a microscopic perspective of photocarrier behavior for understanding the internal photoelectric conversion mechanism of the p–n junction-based PDs, which could further promote the practical applications of high-efficiency self-powered photodetectors.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Simultaneous harnessing of hot electrons and hot holes achieved via n-metal-p Janus plasmonic heteronanocrystals

Xiaodong Wan,Yuying Gao,Mesfin Eshete,Min Hu,Rongrong Pan,Hongzhi Wang,Lizhen Liu,Jia Liu,Jun Jiang,Sergio Brovelli,Jiatao Zhang

DOI: https://doi.org/10.1016/j.nanoen.2022.107217

IF: 17.6

2022-07-01

Nano Energy

Abstract:Plasmonic hybrid nanostructures have opened up avenues for developing new classes of energy conversion materials toward photocatalysis, photovoltaics, and photodetectors. At the core of these applications is how to engineer the interface between the plasmonic/non-plasmonic (typically semiconductor) components, and control the flow and extraction of energetic charge carries within the hybrid system. Despite important advancements on single carrier extraction, the construction of plasmonic nanostructures that can simultaneously harness hot electrons and hot holes has eluded the nascent field. This is because the realization of such nanostructures is extremely challenging, owing to the difficulty in controlled arrangement of disparate materials that can respectively extract hot electrons and holes into one nano-object. Here we present a new dimension for exploitation of plasmonic hot carriers through creating binary energy flow channels across the plasmonic/semiconductor interfaces. This is based on fabrication of the n-type-metal-p-type (n-M-p) heteronanocrystals that consist of plasmonic metal (Au nanorod) adjoined with both n-type (CdS) and p-type (PbS) semiconductors in a core-Janus-shell configuration. Otherwise intractable due to large lattice mismatches, the resulting n-M-p heteronanocrystals display atomically organized interfaces at M-n, M-p and p-n junctions and show suitable interfacial energy barriers. Direct imaging via spatial-resolved surface photovoltage microscopy under NIR light irradiation reveals that the CdS and PbS semiconductor domains can separately collect hot electrons and holes generated from the excitation of plasmons in Au nanorod. This results in extended lifetime of the charge-separated state, and rationalizes the superior performance of n-M-p heteronanocrystals in photocatalytic CO2 reduction even at λ > 700 nm.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
UV-visible Photocurrent Enhancement Using Metal-Semiconductor-metal with Symmetric and Asymmetric Double Schottky Barriers

Li Zhu,Kai Liu,Taozheng Hu,Wen Dong,Zhuo Chen,Zhenlin Wang

DOI: https://doi.org/10.1039/c8nr02466a

IF: 6.7

2018-01-01

Nanoscale

Abstract:We experimentally report improved photocurrent performance under the illumination of both UV and visible light in the metal-semiconductor-metal nanostructures with double Schottky barriers, consisting of a monolayer of Au nanoparticles and a planar Au film separated by a thin WO3 layer. In addition to the near-unit broadband optical absorption causing the increased population of hot electrons, we demonstrate that the occurrence of the electron trapping effect at the bottom Schottky barrier is also responsible for the photocurrent enhancement under visible light illumination. Under the direct UV bandgap excitation of WO3, the electron trapping effect at the bottom barrier plays a crucial role in the anodic photocurrent enhancement. Furthermore, we demonstrate that by replacing the Au film with the metal Pt of higher work function to increase the barrier height of the bottom Schottky barrier, and hence strengthening its ability for electron trapping, the photocurrent is found to gain a further significant enhancement under the illumination of both visible and UV light.
Sampled-data modeling of a new ultra-fast 48V voltage regulator module: experimental validation

M. Youssef,M. Orabi

DOI: https://doi.org/10.1109/APEC.2008.4522965

2008-05-16

Abstract:A new control scheme and modeling technique are proposed to achieve the required ultra-fast transient response for a 48 V/1 V voltage regulator module. The superiority of this scheme is presented by comparing it with the conventional current mode controller through a detailed mathematical analysis with supported simulation and experimental results. Analytical, simulation, and experimental results for a 100 W converter prototype are presented to validate the derived dynamic model and the dynamic performance.
Isolate Utilization of Plasmonic Hot Holes in Optoelectronic Enhancement for Copper Iodide (CuI): A Cross‐Investigation by Confocal Kelvin Probe Force Microscopy

Liang Chen,Zhao Shen,Quanzhen Zhang,Can Zhang,Pu Wang,Laurence A. Belfiore,Jianguo Tang,Sui MAO

DOI: https://doi.org/10.1002/adom.202300230

IF: 9

2023-06-15

Advanced Optical Materials

Abstract:The generation and injection behavior of hot holes by plasmon of Ag nanoparticles (NPs) is investigated. Reflected by both surface potentials obtained by Kelvin probe force microscopy (KPFM) and photoelectrical tests by photodetector fabrication, the behaviors of electrons and holes are cross‐verified and reach the consensus of hot hole injection from Ag nanoparticles to CuI. Nonradiative decays of surface plasmon (SP) can generate photocarriers in femtosecond, and it therefore has been attracting widespread research attention in ultrafast optoelectronics. Taking advantage of the probe technique, Kelvin probe force microscopy (KPFM) can characterize the spatial distribution of hot carriers in nanoscale and thereby provide necessary analysis for device investigation and engineering. In this work, the behavior of plasmonic hot holes is demonstrated for Ag nanoparticles (NPs) based on the fabrication of CuI hole transport layers. The morphological, optical, and electronic properties of Ag NPs and CuI films are systematically investigated. With the confocal lasers of over‐ and sub‐bandgap wavelength, reversed evolution trends of surface potentials are observed by KPFM, indicating the effective injection of hot holes into CuI valence band (VB). Cross‐verification is also performed based on the fabrication of metal–semiconductor–metal (MSM) photodetectors, and the photoelectrical tests highly dovetail with the surface potential evolution. This research provides an important reference for the plasmonic photoelectronics in both device design and research methods.

materials science, multidisciplinary,optics
Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

Zhihao Huo,Yufei Zhang,Xun Han,Wenqiang Wu,Wenkai Yang,Xiandi Wang,Mengmeng Zhou,Caofeng Pan

DOI: https://doi.org/10.1016/j.nanoen.2021.106090

IF: 17.6

2021-08-01

Nano Energy

Abstract:ZnO, as a potential candidate, has attracted extensive attention in optoelectronics, energy systems and other fields. However, the wide bandgap of ZnO severely limits its application in a wide range of photoresponse, and preparing p-type ZnO is another stumbling block that hinders the development of ZnO-based devices. Here, a high-performance photodetector with a wider spectral detection range from UV–vis to NIR builds on the structure of p-ZnO/Al2O3/n-Si is fabricated. The PD exhibits a marked sensitivity (75,000%), excellent responsivity (13.80 A W−1, 365 nm), high specific detectivity (> 1012 Jones), fast response (< 100 μs), which indicates that inserting an insulated Al2O3 layer between an n-type semiconductor and a p-type semiconductor is a fruitful method to enhance carriers separation and collection efficiency. The carrier transport mechanism at the interface of PDs with different Al2O3 thickness is based on the quantum mechanical of Fowler-Nordheim tunneling or direct tunneling. Additionally, the overall signal levels of the photodetector could be further optimized using the piezo-phototronic effect. This study demonstrates an alternative route to implement high-efficiency photodetectors with a broader response range and provides an in-depth understanding of regulating carrier tunneling of the p-ZnO/Al2O3/n-Si heterojunction using the piezo-phototronic effect.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Successively Enhanced Photoelectrochemical Performance from Plasmonic Au Nanoparticles Decorated Ta3N5-TiO2 Heterostructure

Jiaqi Wang,Yuxue Yang,Tongzhou Xu,Jiawen Li,Zhenghe Wang,Shen Ao,Yunhan Hu,Zheng Xie,Ji Shi,Weipeng Wang,Zhengjun Zhang

DOI: https://doi.org/10.1016/j.cej.2024.158086

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Semiconductor-based photocatalysts innovation and heterojunction design incorporating novel materials have shed light on the enhancement of the photoelectrochemical (PEC) performances concerning energy fields, among which the plasmonic metal/semiconductor nanostructure raised extensive research attentions due to further PEC performance enhancement. In this work, an innovatively sandwiched structure composed of Ta3N5 nanorods (NRs)/ultrathin TiO2/Au Nanoparticles (NPs) was designed with successive PEC enhancement. The successful combination between the Ta3N5 nanorods and the dielectric TiO2 layer represented carriers’ migration, in addition with the heterojunction between TiO2 and Au NPs contributed to the synergistically suppression of the charge carriers’ recombination. Au NPs could further serve as the plasmonic absorber underlying their localized surface plasma resonance (LSPR) effect, expanding the light absorption over the whole visible range, and inducing hot electrons injection to the TiO2 layer effectively. The hierarchical performance improvement via surface plasmon enhanced photoelectrochemical activity in the well-designed heterostructure propose strong potential for the development of novel photocatalysts.
Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)

Yanhao Wang,Wei Zheng,Hao Ji,Depeng Shen,Yuhai Zhang,Yingkuan Han,Jianwei Gao,Le Qiang,Hong Liu,Lin Han,Yu Zhang

DOI: https://doi.org/10.1002/admi.202170062

IF: 5.4

2021-06-01

Advanced Materials Interfaces

Abstract:The tunneling effect through a thin HfO2 layer enables a CsPbBr3/HfO2/Si heterostructure photodetector with enhanced optoelectronic performance. In article number <a href="https://doi.org/10.1002/admi.202100279">2100279</a>, Yu Zhang and co-workers demonstrate that the optoelectronic performance of the CsPbBr3/HfO2/Si heterostructure device can be modulated through both Vds and Vgs, providing flexibility for different applications. 

materials science, multidisciplinary,chemistry

Phase I/II study of low-dose intravenous OKT3 and subcutaneous interleukin-2 in metastatic cancer.

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from P-Si/zno Nanoemitters.

Enhanced hot-electron injection across Au/GaN heterojunction by the piezo-phototronic effect for efficient sub-bandgap photodetection

Interface Engineering on ZnO/Au Based Schottky Junction for Enhanced Photoresponse of UV Detector with TiO2 Inserting Layer

Hot Electrons in Electrically Driven Plasmonic Nanorod Metamaterials (conference Presentation)

Plasmonic hot-hole injection combined with patterned substrate for performance improvement in trapezoidal PIN GaN microwire self-powered ultraviolet photodetector

Bidirectional 10 Gb/s coherent WDM-PON with colorless ONUs and extended reach

Enhanced transfer efficiency of plasmonic hot-electron across Au/GaN interface by the piezo-phototronic effect

Cu2O@Au-CsPbI3 heterostructures for plasmon hot carrier transfer enhanced optoelectronics

Great Enhancement of Self‐Powered Photoresponse Performance of C 3 H 8 NSi‐TiO 2 NRAs/n‐Si Heterojunction by Build‐In and Build‐Out Electric Field Jointly Promoting Carrier Separation

Enhancing Hot-Electron Photodetection of a TiO2/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure

Thermo-enhanced Field Electron Emission by Bandto-Ban Tunneling from P-Si/zno Nano-Emitters

Ultrafast Studies of Hot-Hole Dynamics in Au/p-GaN Heterostructures

Structurally Unraveling the Photocarrier Behavior of Cu 2 O/ZnO Heterojunction Photodetectors

Simultaneous harnessing of hot electrons and hot holes achieved via n-metal-p Janus plasmonic heteronanocrystals

UV-visible Photocurrent Enhancement Using Metal-Semiconductor-metal with Symmetric and Asymmetric Double Schottky Barriers

Sampled-data modeling of a new ultra-fast 48V voltage regulator module: experimental validation

Isolate Utilization of Plasmonic Hot Holes in Optoelectronic Enhancement for Copper Iodide (CuI): A Cross‐Investigation by Confocal Kelvin Probe Force Microscopy

Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

Successively Enhanced Photoelectrochemical Performance from Plasmonic Au Nanoparticles Decorated Ta3N5-TiO2 Heterostructure

Performance of CsPbBr 3 /HfO 2 /Si: Performance‐Enhanced CsPbBr 3 /HfO 2 /Si Heterostructure Optoelectronics through the Tunneling Effect (Adv. Mater. Interfaces 11/2021)