Robert E. Throckmorton,S. Das Sarma
Abstract:The work of Ahn derives the noise power spectrum of a two-level fluctuator (TLF) in the case that it interacts only with a subregion of a full electron bath and thus is subject to a fluctuating temperature. However, Eq.~(1), which gives the variance of the subbath temperature in terms of the heat capacity, in that work carries the implicit assumption that the heat capacity of this subbath may be taken to be a constant, which is a good approximation at higher temperatures, but breaks down at lower temperatures. We thus extend this work to the case in which the fact that the electronic heat capacity of a two-dimensional electron gas (2DEG) $C_V\propto T$, rather than constant in temperature, is fully taken into account. We show that, at low temperatures, the resulting power spectrum of the noise $S(\omega)\propto e^{-C/T^{3/8}}$, in contrast to $S(\omega)\propto e^{-C'/T^{1/3}}$ as found previously, where $C$ and $C'$ are constants. We also compare the numerical results that one would obtain from the two models and find that our results for $S(\omega)$ can differ from those of Ahn by several orders of magnitude at low temperatures.
What problem does this paper attempt to address?
### What problem does this paper attempt to solve?
This paper aims to solve the problem of the noise spectrum when the two - level fluctuator (TLF) in semiconductor quantum dots interacts with the electron subsystem at low temperatures. Specifically, the paper corrects the unreasonable assumption in previous studies that the electron heat capacity is assumed to be constant, and considers the case where the heat capacity in the two - dimensional electron gas (2DEG) changes linearly with temperature.
#### Specific problem description:
1. **Limitations of existing models**:
- The work of Ahn et al. [Phys. Rev. B 103, L041304 (2021)] assumes that the heat capacity of the electron subsystem is constant, which is reasonable at high temperatures but will lead to errors at low temperatures.
- In the existing model, the noise power spectrum \( S(\omega, T_0)\propto e^{-C'/T^{1/3}_0}\), where \( C'\) is a constant.
2. **Goals of the new model**:
- Considering the actual situation, the heat capacity \( C_V\propto T\) of 2DEG, that is, the heat capacity changes linearly with temperature.
- Derive a more accurate formula for the noise power spectrum, and give \( S(\omega, T_0)\propto e^{-C/T^{3/8}_0}\) at low temperatures, where \( C\) is a constant.
- Compare the results of the new and old models at different temperatures, especially at low temperatures, the results of the new model may differ from the old model by several orders of magnitude.
#### Main contributions:
- **Theoretical derivation**: By introducing new relationships between temperature distribution and energy distribution, a more accurate expression for the noise power spectrum is derived.
- **Numerical calculation**: Verify the validity of the new model through numerical simulation and compare it with experimental data.
- **Experimental verification**: Apply the new model to the fitting of experimental data to verify its validity in explaining experimental phenomena.
### Conclusion
By carefully considering the change of electron heat capacity with temperature, this paper proposes a more accurate noise power spectrum model, especially significantly improving the understanding of the noise behavior of two - level fluctuators at low temperatures. This not only helps to better understand the noise mechanism in semiconductor quantum dots, but also provides theoretical support for the design of higher - fidelity qubits in the future.