Abstract:Atomically thin two-dimensional transition-metal dichalcogenides (2D-TMDs) have emerged as semiconductors for next-generation nanoelectronics. As 2D-TMD-based devices typically utilize metals as the contacts, it is crucial to understand the properties of the 2D-TMD/metal interface, including the characteristics of the Schottky barriers formed at the semiconductor-metal junction. Conventional methods for investigating the Schottky barrier height (SBH) at these interfaces predominantly rely on contact-based electrical measurements with complex gating structures. In this study, we introduce an all-optical approach for non-contact measurement of the SBH, utilizing high-quality WS 2 /Au heterostructures as a model system. Our approach employs a below-bandgap pump to excite hot carriers from the gold into WS 2 with varying thicknesses. By monitoring the resultant carrier density changes within the WS 2 layers with a broadband probe, we traced the dynamics and magnitude of charge transfer across the interface. A systematic sweep of the pump wavelength enables us to determine the SBH values and unveil an inverse relationship between the SBH and the thickness of the WS 2 layers. First-principles calculations reveal the correlation between the probability of injection and the density of states near the conduction band minimum of WS 2 . The versatile optical methodology for probing TMD/metal interfaces can shed light on the intricate charge transfer characteristics within various 2D heterostructures, facilitating the development of more efficient and scalable nano-electronic and optoelectronic technologies.

Gate-modulated reflectance spectroscopy for detecting excitonic species in two-dimensional semiconductors

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Nano-spectroscopy of excitons in atomically thin transition metal dichalcogenides

Quantum control of exciton wave functions in 2D semiconductors

Optical Two-Dimensional Fourier Transform Spectroscopy of Semiconductors

Quantum control of exciton wavefunctions in 2D semiconductors

Optical 2-D Fourier Transform Spectroscopy of Excitons in Semiconductor Nanostructures

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

Directly Visualization of Excitonic Wavefunction in 2D Semiconductors by Angle Resolved Photoemission Spectroscopy

Transient Optical Modulation of Two-Dimensional Materials by Excitons at Ultimate Proximity

Giant Bandgap Renormalization and Excitonic Effects in A Monolayer Transition Metal Dichalcogenide Semiconductor

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Quantitative modeling of gate-tunable cavity exciton-polaritons in transition-metal dichalcogenides

Coupled exciton internal and center-of-mass motions in two-dimensional semiconductors by a periodic electrostatic potential

On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering