Abstract:We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional transition metal dichalcogenides. Successfully observing excited states of excitons from cryogenic to room temperature showed that this method is more sensitive to excitonic signals than traditional reflectance spectroscopy. Our results demonstrated the potential of this reflectance spectroscopy method in studying exciton physics in two-dimensional transition metal dichalcogenides and their heterostructures.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to detect excitons and their excited states in two - dimensional transition metal dichalcogenides (TMDs) more sensitively and effectively, especially at room temperature and in high - energy states. Traditional reflection spectroscopy techniques perform poorly under these conditions and it is difficult to observe the signals of high - energy excited states. ### Specific problems: 1. **Limitations of traditional methods**: - Traditional reflection spectroscopy (such as conventional reflection contrast measurement) can only observe low - energy ground - state excitons at low temperatures and cannot detect higher - energy excited states. - Although photoluminescence (PL) spectroscopy can detect low - energy ground - state excitons, it is almost invisible for high - energy excited states (such as Rydberg states), and the PL intensity is easily affected by non - radiative recombination. 2. **Need for increased sensitivity**: - A more sensitive method is required to detect the excitonic physical properties in two - dimensional semiconductor materials, especially high - energy excited states at room temperature. ### Solution: The authors developed a new microspectroscopy technique - **Gated Modulated Reflection (GMR) spectroscopy** - for detecting excitonic states in two - dimensional transition metal dichalcogenides. GMR spectroscopy modulates the carrier density by applying an alternating - current gate voltage, thereby selectively detecting changes in the reflection signal. This method can effectively filter out background noise and significantly improve the sensitivity to excitonic signals. ### Main achievements: - **High sensitivity**: GMR spectroscopy can clearly observe the 2s state of excitons at both low and room temperatures, which is not achievable with traditional reflection spectroscopy. - **Temperature dependence**: The change in the energy of the excitonic 2s state with temperature was studied and fitted with the Varshni equation, verifying that these high - energy signals indeed originate from the excitonic 2s state. - **Electric - field control**: By changing the gate voltage, the change in the energy of the 2s states of excitons and trions with carrier density was observed. ### Significance: This work demonstrates that GMR spectroscopy is a powerful tool that can be used to deeply study the excitonic physical properties in two - dimensional semiconductor materials, especially those high - energy excited states that exist at room temperature. This provides a new approach for exploring exotic excitonic states (such as moiré excitons) in the future.

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