Chern mosaic and ideal flat bands in equal-twist trilayer graphene

Daniele Guerci,Yuncheng Mao,Christophe Mora

2023-05-06

Abstract:We study trilayer graphene arranged in a staircase stacking configuration with equal consecutive twist angle. On top of the moiré cristalline pattern, a supermoiré long-wavelength modulation emerges that we treat adiabatically. For each valley, we find that the two central bands are topological with Chern numbers $C=\pm 1$ forming a Chern mosaic at the supermoiré scale. The Chern domains are centered around the high-symmetry stacking points ABA or BAB and they are separated by gapless lines connecting the AAA points, where the spectrum is fully connected. In the chiral limit and at a magic angle of $\theta \sim 1.69^\circ$, we prove that the central bands are exactly flat with ideal quantum curvature at ABA and BAB. Furthermore, we decompose them analytically as a superposition of an intrinsic color-entangled state with $\pm 2$ and a Landau level state with Chern number $\mp 1$. To connect with experimental configurations, we also explore the non-chiral limit with finite corrugation and find that the topological Chern mosaic pattern is indeed robust and the central bands are still well separated from remote bands.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of supermoiré long - wave modulation caused by inter - layer twisting on the electronic structure and topological properties in equal - twist trilayer graphene (eTTG). Specifically, the authors focus on:

1. **Chern Mosaic Phenomenon in Supermoiré Lattice**: In eTTG, in addition to the moiré lattice, a supermoiré modulation with a longer wavelength will appear. This modulation will lead to the formation of topological regions with different Chern numbers in the electronic band structure, and these regions form the so - called "Chern mosaic".

2. **Formation of Ideal Flat Bands and Their Topological Properties**: Near a specific magic angle, the two central bands will become very flat and have an ideal quantum curvature. In particular, in the ABA and BAB stacking configurations, these two bands have total Chern numbers of ±1 respectively.

3. **Topological Phase Transitions and Domain Wall Properties**: Between high - symmetry stacking points (such as AAA, ABA, and BAB), there are gapless lines that connect different topological regions and form domain walls. The spectra on these domain walls are completely connected, that is, there is no band gap.

4. **Stability in the Achiral Limit**: Even after introducing a finite corrugation, the above - mentioned topological features remain stable, indicating that these phenomena are not just theoretical predictions but real physical effects that can be observed in experiments.

Through these studies, the authors have revealed the unique electronic states and topological structures in eTTG, providing a new perspective for further exploring topological matter states in two - dimensional materials. For example, this system can be an ideal platform for studying fractional Chern insulators because the large band gap enables it to effectively shield the influence of Coulomb interactions.

### Formula Summary

- **Magic Angle Conditions**:
- Magic angle for ABA stacking: \(\theta_{ABA}\approx1.69^{\circ}\)
- Magic angle for AAA stacking: \(\theta_{AAA}\approx0.75^{\circ}\)

- **Chern Number Calculation Formula**:
\[
C = \frac{\phi_{k_0 + b_2,b_1}+\phi_{k_0,b_2}-\phi_{k_0,b_1}-\phi_{k_0 + b_1,b_2}}{2\pi}
\]
where \(\phi\) represents the phase factor of the momentum - space boundary condition.

- **Renormalized Velocity Vanishing Condition**:
At the magic angle, the renormalized velocity \(v^*\) vanishes, causing the bands to become completely flat near the charge neutral point.

- **Zero - Mode Wave Function**:
\[
\chi_k(r)=\bar{\eta}_k(\bar{z})\chi_{\Gamma}(r)
\]
where \(\bar{\eta}_k(\bar{z})\) is an anti - holomorphic function related to the holomorphic function \(\eta_k(z)\).

These results provide an important theoretical basis for understanding topological electronic states in multilayer graphene and point the way for future experimental verification.