Abstract:Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this work, we analytically derive the threshold current of field-free perpendicular magnetization switching using the anomalous SOT. And we numerically calculate the track of the magnetic moment in a FM free layer when an applied current is smaller and greater than the threshold current. After that, we study the applied current dependence of the switching time and the switching energy consumption, which shows the minimum energy consumption decreases as out-of-plane torque proportion increases. Then we study the dependences of the threshold current on anisotropy strength, out-of-plane torque proportion, FM free layer thickness and Gilbert damping constant, and the threshold current shows negative correlation with the out-of-plane torque proportion and positive correlation with the other three parameters. Finally, we demonstrate that when the applied current is smaller than the threshold current, although it cannot switch the magnetization of FM free layer, it can still equivalently add an effective exchange bias field H_{bias} on the FM free layer. The H_{bias} is proportional to the applied current J_{SOT}, which facilitates the determination of the anomalous SOT efficiency. This work helps us to design new spintronic devices that favor field-free switching perpendicular magnetization using the anomalous SOT, and provides a way to adjust the exchange bias field, which is helpful in controlling FM layer magnetization depinning.

Threshold Current for Field-free Switching of the In-plane Magnetization in the Three-terminal Magnetic Tunnel Junction

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

A Novel Field-Free SOT Magnetic Tunnel Junction With Local VCMA-Induced Switching

Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Field-free reliable magnetization switching in a three-terminal perpendicular magnetic tunnel junction via spin-orbit torque, spin-transfer torque, and voltage-controlled magnetic anisotropy

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Spin-Transfer-Induced Magnetization Switching In Magnetic Tunnel Junctions

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctions

Synergizing intrinsic symmetry breaking with spin–orbit torques for field-free perpendicular magnetic tunnel junction

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Simulation of Electric-Field and Spin-Transfer-Torque Induced Magnetization Switching in Perpendicular Magnetic Tunnel Junctions

Effect of the Field-Like Spin Torque on the Switching Current and Switching Speed of Magnetic Tunnel Junction with Perpendicularly Magnetized Free Layers

Magnetization configurations in current-induced tunnel junction switching

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque