Abstract:The latest discovery of ferromagnetism in atomically thin films of semiconductors Cr$_2$Ge$_2$Te$_6$ and CrI$_3$ has unleashed numerous opportunities for fundamental physics of magnetism in two-dimensional (2D) limit and also for technological applications based on 2D magnetic materials. In this paper, we present a comprehensive theoretical study of the magnetic, electronic, optical and magneto-optical(MO) properties of multilayers [monolayer(ML), bilayer and trilayer] and bulk CrI$_3$, based on the density functional theory with the generalized gradient approximation plus on-site Coulomb repulsion scheme. Interestingly, all the structures are found to be single-spin ferromagnetic(FM) semiconductors. They all have a large out-of-plane magnetic anisotropy energy(MAE) of $\sim$0.5 meV/Cr. These large MAEs suppress transverse spin fluctuations and thus stabilize long-range magnetic orders at finite temperatures down to the ML limit. They also exhibit strong MO effects with their Kerr and Faraday rotation angles being comparable to that of best-known bulk MO materials. The shape and position of the main features in the optical and MO spectra are found to be nearly thickness-independent although the magnitude of Kerr rotation angles increases monotonically with the film thickness. Magnetic transition temperatures estimated based on calculated exchange coupling parameters, calculated optical conductivity, MO Kerr and Faraday rotation angles agree quite well with available experimental data. The calculated MAE as well as optical and MO properties are analyzed in terms of the calculated orbital-decomposed densities of states, band state symmetries and dipole selection rules. Our findings of large out-of-plane MAEs and strong MO effects in these single-spin FM semiconducting CrI$_3$ ultrathin films suggest that they will find valuable applications in semiconductor MO and spintronic nanodevices.

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Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$

Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor

Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions

Gate control of magnon spin transport in unconventional magnon transistors based on the van der Waals antiferromagnet CrPS4

Magnon spin transport in the van der Waals antiferromagnet CrPS4 for non-collinear and collinear magnetization

Layer-Dependent Giant Magnetoresistance in Two-Dimensional Cr PS 4 Magnetic Tunnel Junctions

Magnetic structure and exchange interactions in the layered semiconductor CrPS4

Band gap crossover and insulator–metal transition in the compressed layered CrPS4

Band-driven switching of magnetism in a van der Waals magnetic semimetal

Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4

Magnetotransport Study of Van Der Waals CrPS4/(Pt,Pd) Heterostructures: Spin-Flop Transition and Room-Temperature Anomalous Hall Effect

Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Influence of magnetism on vertical hopping transport in CrSBr

Magnetic Structure and Metamagnetic Transitions in the van der Waals Antiferromagnet CrPS 4 .

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Gate-tunable ferromagnetism in a van der Waals magnetic semimetal

Cr Doping Induced Negative Transverse Magnetoresistance in Cd3As2 Thin Films

Brightened Optical Transition as Indicator of Multiferroicity in a Layered Antiferromagnet