Abstract:Magnetic tunnel junctions (MTJs) with ferromagnetic (FM) and/or antiferromagnetic (AFM) materials have attracted wide interest for their promising application in spintronic devices. Recently, many discovered two-dimensional (2D) magnetic materials offer a flexible platform to design switchable layered FM/AFM MTJs. By using the first-principles quantum transport simulations, we designed the MTJs based on 2D van der Waals layered MnBi _2 Te _4 and studied the spin-dependent electronic and transport properties of the MTJs with the different thickness MnBi _2 Te _4 as well as their FM and AFM configurations. As the increment of MnBi _2 Te _4 layers, our results show that there is a higher spin polarization and the tunnel magnetoresistance (TMR) ratio at the Fermi level correspondingly increases: 100 _2 Te _4 -based MTJs. For Moore’s Law to continue to work, there is an urgent demand to find new principles, new materials, and more concepts for future devices. Among them, spintronics has exhibited great potential due to its excellent performance. A typical widely used device is the magnetic tunnel junction (MTJ) in spintronics. Recently, more and more MTJs based on discovered two-dimensional magnetic materials have been predicted with higher tunnel magnetoresistance (TMR). As the first magnetic topological materials, MnBi2Te4 hold various magnetic states and thickness-dependent properties rather than single ferromagnetic states, and there are more possibilities to design versatile MTJ devices. Here, we construct the magnetic tunnel junctions based on MnBi2Te4 with Cu as the electrode: Cu/n-Layer-MnBi2Te4/Cu (n = 1, 2, 3, 4) device. Based on density functional theory and nonequilibrium Green’s function, we found that with the thickening of the MnBi2Te4 layers, the spin filtering of MnBi2Te4 is more apparent, where the TMR value at the Fermi level is 100 Schematic view of MnBi2Te4-based device model. The maximum tunnel magnetoresistance (TMR) ratio and the TMR ratio at the Fermi level in Cu/2(4)L-MBT/Cu magnetic tunnel junctions without and with spin–orbit coupling.

Conductance oscillations of antiferromagnetic layer tunnel junctions

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Current-driven Spin Oscillations in Noncollinear Antiferromagnetic Tunnel Junctions

Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices

Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x

Direct visualization of edge state in even-layer MnBi2Te4 at zero magnetic field

Quantum oscillations in 2D insulators induced by graphite gates

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Universal conductance fluctuations in a MnBi$_2$Te$_4$ thin film

Effect of Antiferromagnetic Layers on the Spin-Dependent Transport in Magnetic Tunnel Junctions

Quantum Oscillations of Tunneling Magnetoresistance in Magnetic Tunnel Junctions

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Spin-dependent Tunneling in 2D MnBi 2 Te 4 -Based Magnetic Tunnel Junctions

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Even-odd Interference Effect in a Topological Superconducting Wire

Interlayer ferroelectric polarization modulated anomalous Hall effects in four-layer MnBi2Te4 antiferromagnets

Universal Conductance Fluctuations in a MnBi2Te4 Thin Film

Asymmetric Fraunhofer spectra in a topological insulator-based Josephson junction