Effects of first- and second-order topological phases on equilibrium crystal shapes

Yutaro Tanaka,Shuichi Murakami
DOI: https://doi.org/10.1103/PhysRevB.107.245148
2023-06-28
Abstract:We study equilibrium crystal shapes of a topological insulator (TI), a topological crystalline insulator (TCI) protected by mirror symmetry, and a second-order topological insulator (SOTI) protected by inversion symmetry. By adding magnetic fields to the three-dimensional TI, we can realize the mirror-symmetry-protected TCI and the inversion-symmetry-protected SOTI. They each have topological boundary states in different positions: the TCI has gapless states on the surfaces that are invariant under the symmetry operation, and the SOTI has gapless states at the intersections between certain surfaces. In this paper, we discuss how these boundary states affect the surface energies and the equilibrium crystal shapes in terms of the calculations of the simple tight-binding model by using the Wulff construction. By comparing the changes in the shapes of the TI to that of the trivial insulator through the process of applying the magnetic fields, we show that the presence/absence of the topological boundary states affects the emergence of the specific facets in a different way from the trivial insulator.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the differences in the equilibrium crystal shapes of topological insulators (TI), topological crystalline insulators (TCI) protected by mirror symmetry, and second - order topological insulators (SOTI) protected by inversion symmetry, especially how the surface states of these materials affect their surface energy and the final equilibrium crystal shape after a magnetic field is applied. Specifically, the paper studies the following problems by introducing the tight - binding model and using the Wulff construction method: 1. **Influence of topological boundary states**: Study how the surface energy of different types of topological materials (such as TI, TCI, and SOTI) changes due to the presence or absence of topological boundary states (such as surface states and hinge states), and further how it affects the equilibrium crystal shape. 2. **Effect of magnetic field**: Explore how the transition from TI to TCI and SOTI is achieved after a magnetic field is applied, and analyze the specific influence of this transition on the surface energy and crystal shape. 3. **Comparison with trivial insulators**: By comparing the crystal shape changes between trivial insulators and topological insulators before and after the application of a magnetic field, reveal the unique role of topological boundary states. 4. **Theoretical model and calculation method**: Use the tight - binding model to calculate the band structures of different crystal planes, and predict the equilibrium crystal shape through the Wulff construction method. In addition, the existence of hinge states in SOTI and their influence on the surface energy are also explained through the Dirac Hamiltonian. ### Formula summary - **Tight - binding model Hamiltonian**: \[ H_{\text{TI}}(\mathbf{k})=(m - t\sum_{j = x,y,z}\cos k_j)\tau_z\otimes\sigma_0+(v + v'\cos k_z)(\sin k_x\tau_x\otimes\sigma_x+\sin k_y\tau_x\otimes\sigma_y)+v_z\sin k_z\tau_x\otimes\sigma_z \] - **TCI Hamiltonian**: \[ H_{\text{MTCI}}(\mathbf{k}) = H_{\text{TI}}(\mathbf{k})+B_z\sigma_z \] - **SOTI Hamiltonian**: \[ H_{\text{SOTI}}(\mathbf{k}) = H_{\text{TI}}(\mathbf{k})+\sum_{i = x,y,z}B_i\sigma_i \] - **Definition of surface energy**: \[ E_{\text{surf}}^{(hkl)}:=\frac{N}{2S^{(hkl)}}\left(\sum_{n = 1}^N E_{\text{slab},n}^{(hkl)}|_{\lambda = 0}-\sum_{n = 1}^N E_{\text{slab},n}^{(hkl)}|_{\lambda = 1}\right) \] - **Wulff construction**: \[ W=\bigcap_{(hkl)\in S^2}\Gamma_n^{(hkl)},\quad\Gamma_n^{(hkl)}=\left\{\mathbf{r}\in\mathbb{R}^3\mid\mathbf{r}\cdot\mathbf{n}^{(hkl)}\leq E_{\text{surf}}^{(hkl)}\right\} \] - **Dirac surface Hamiltonian**: \[ H_{\text{Dirac}} = v_s(\mathbf{k}_s\times\mathbf{n})\cdot\boldsymbol{\sigma}+m_n\mathbf{n}\cdot\bo