Second-order Topological Insulators in Two-Dimensional Monolayers of the 1T-Phase PtSe2 Material Class

Guozhi Long,Mingxiang Pan,Hui Zeng,Huaqing Huang
DOI: https://doi.org/10.1103/physrevmaterials.8.044203
IF: 3.98
2024-01-01
Physical Review Materials
Abstract:Two-dimensional (2D) second -order topological insulators (SOTIs) have been extensively studied due to their unique feature of fractional charge at corners. In order to realize such kind of SOTI in natural materials, we reveal a class of experimentally synthesized 1T -phase transition metal dichalcogenides (TMDs) monolayers as candidates of SOTI. Taking the monolayer of 1T-PtSe 2 as an example, we identify its second -order topology by determining the nonzero fractional corner charge using first -principles calculations and symmetry analysis. Furthermore, we emphasize the role of crystalline symmetry in the emergence of corner states based on an effective edge theory. Due to the same symmetry and similar band structure, our analysis can be directly applied to other 1T-TMD monolayers. Our findings uncover the previously overlooked higher -order topology in 2D 1T-TMD materials, which may draw immediate experimental attention.
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