Radiative suppression of exciton-exciton annihilation in a two-dimensional semiconductor

Luca Sortino,Merve Gülmüs,Benjamin Tilmann,Leonardo de S. Menezes,Stefan A. Maier
2023-04-13
Abstract:Two-dimensional (2D) semiconductors possess strongly bound excitons, opening novel opportunities for engineering light-matter interaction at the nanoscale. However, their in-plane confinement leads to large non-radiative exciton-exciton annihilation (EEA) processes, setting a fundamental limit for their photonic applications. In this work, we demonstrate suppression of EEA via enhancement of light-matter interaction in hybrid 2D semiconductor-dielectric nanophotonic platforms, by coupling excitons in WS$ _2 $ monolayers with optical Mie resonances in dielectric nanoantennas. The hybrid system reaches an intermediate light-matter coupling regime, with photoluminescence enhancement factors up to 10$ ^2 $. Probing the exciton ultrafast dynamics reveal suppressed EEA for coupled excitons, even under high exciton densities $>$ 10$^{12}$ cm$^{-2} $. We extract EEA coefficients in the order of 10$^{-3} $, compared to 10$^{-2} $ for uncoupled monolayers, as well as absorption enhancement of 3.9 and a Purcell factor of 4.5. Our results highlight engineering the photonic environment as a route to achieve higher quantum efficiencies for low-power hybrid devices, and larger exciton densities, towards strongly correlated excitonic phases in 2D semiconductors.
Mesoscale and Nanoscale Physics,Optics
What problem does this paper attempt to address?
The paper attempts to address the issue of excessively strong non-radiative exciton-exciton annihilation (EEA) processes in 2D semiconductor materials due to in-plane confinement, which limits their performance in photonic applications. Specifically, excitons in 2D semiconductor materials have large binding energies, providing new opportunities for light-matter interactions at the nanoscale. However, the exciton-exciton annihilation process in these materials is very fast, especially at high exciton densities, which becomes a fundamental limitation for their photonic applications. To overcome this limitation, the authors propose to suppress exciton-exciton annihilation by enhancing light-matter interactions. They coupled excitons in monolayer WS₂ with the optical Mie resonances of dielectric nanoantennas, constructing a hybrid 2D semiconductor-dielectric nanophotonic platform. Through this approach, they achieved enhanced photoluminescence of excitons and observed that the non-radiative exciton-exciton annihilation process of coupled excitons was significantly suppressed, even at high exciton densities (>10¹² cm⁻²). The main findings include: 1. **Enhanced photoluminescence**: The photoluminescence enhancement factor in the coupled system reached over 10². 2. **Reduced non-radiative exciton-exciton annihilation coefficient**: The EEA coefficient of coupled excitons was approximately 10⁻³ cm²/s, while the EEA coefficient of uncoupled monolayer WS₂ was 10⁻² cm²/s, reduced by about one order of magnitude. 3. **Enhanced spontaneous emission rate**: Through the Purcell effect, the spontaneous emission rate of coupled excitons was significantly increased, with a Purcell factor of 4.5. 4. **Enhanced absorption**: The absorption rate of the coupled system was increased by 3.9 times. These results indicate that by engineering the photonic environment, higher quantum efficiency and greater exciton density can be achieved, providing a new pathway for low-power hybrid devices and the study of strongly correlated exciton phases.