Resonant Photon-Exciton Coupling in All-Semiconductor Heterostructures Composed of Silicon Nanosphere and Monolayer WS2

Hao Wang,Jinxiu Wen,Pu Liu,Jiahao Yan,Yu Zhang,Fei Liu,Juncong She,Jun Chen,Huanjun Chen,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.48550/arXiv.1710.11447

2017-10-31

Abstract:Tailoring and enhancing the interaction between light and matter is of great importance for both fundamental researches and future photonic and optoelectronic applications. Due to their high exciton oscillator strength and large exciton binding energy, two-dimensional atomic semiconducting transition metal dichalcogenides have recently emerged as an excellent platform for the strong photon-exciton interaction by integrating with optically resonant cavities. Here, we propose an all-semiconductor system composed of individual silicon nanospheres and monolayer WS2 and investigate the resonance coupling between these two constituents. By coating the silicon nanospheres with monolayer WS2, we demonstrate the strong resonance coupling between the magnetic dipole mode and A-exciton, evidenced by an anticrossing behavior in the scattering energy diagram with a Rabi splitting of 77 meV. Compared with the plasmonic analogues, the resonance coupling in all-semiconductor heterostructure is much stronger and less sensitive to the spacing between the silicon nanosphere core and WS2 shell. When the silicon nanospheres are placed onto the WS2 monolayer with a point contact, resonance coupling manifested by the quenching dips in the scattering spectra can also be observed at ambient conditions, which involves only a few excitons. Finally, resonance coupling in the all-semiconductor heterostructure can be active controlled by temperature scanning. Our findings suggest that this all-semiconductor heterostructure can be exploited for future on-chip nanophotonics associated with strong light-matter interactions.

Optics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to achieve strong resonant coupling between photons and excitons by designing an all - semiconductor heterostructure composed of a single silicon nanosphere and a monolayer of tungsten disulfide (WS₂). Specifically, the researchers hope to enhance the interaction between light and matter through this heterostructure, which is not only of great significance for basic scientific research, but also has a potential impact on the development of future photonics and optoelectronic applications.

It is mentioned in the article that due to their high exciton oscillation strength and large exciton binding energy, two - dimensional transition - metal dichalcogenides (TMDs) have recently received extensive attention as an excellent platform for achieving strong photon - exciton interactions. In this study, the authors proposed an all - semiconductor system composed of a single silicon nanosphere and a monolayer of WS₂ and explored the resonant coupling between these two components. By coating a monolayer of WS₂ on the silicon nanosphere, the researchers demonstrated strong resonant coupling between the magnetic dipole mode and the A - exciton, manifested as an anti - crossing behavior in the scattering energy diagram, with a Rabi splitting energy of 77 meV.

In addition, compared with plasmonic analogues, the resonant coupling in this all - semiconductor heterostructure is stronger and less sensitive to the distance between the silicon nanosphere core and the WS₂ shell. When the silicon nanosphere is placed on the WS₂ monolayer in a point - contact manner, resonant coupling manifested by a quenching dip in the scattering spectrum can also be observed under ambient conditions, which involves only a few excitons. Finally, the resonant coupling effect in the all - semiconductor heterostructure can be actively controlled by temperature scanning. These findings indicate that this all - semiconductor heterostructure can be used for future on - chip nanophotonics applications related to strong light - matter interactions.