Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Electron confinement in chain-doped TMDs: A platform for spin-orbit coupled 1D physics

The Orbitally Selective Mott Phase in Electron Doped Twisted TMDs: A Possible Realization of the Kondo Lattice Model

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Emergent Quantum Phenomena of Noncentrosymmetric Charge-Density Wave in 1T-Transition Metal Dichalcogenides

Defect Tolerant Monolayer Transition Metal Dichalcogenides

Heavy fermions vs doped Mott physics in heterogeneous Ta-dichalcogenide bilayers

Tunable Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers Via Charge Doping

Giant spin-splitting and gap renormalization driven by trions in single-layer WS$_2$/h-BN heterostructures

Defect-induced states, defect-induced phase transition and excitonic states in bent transition metal dichalcogenide (TMD) nanoribbons: density functional vs. many body theory

Novel doping alternatives for single-layer transition metal dichalcogenides

Emergent Quantum Phenomena of a Noncentrosymmetric Charge Density Wave in -Transition Metal Dichalcogenides

Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Flat Band Generation through Interlayer Geometric Frustration in Intercalated Transition Metal Dichalcogenides

Electron Transport Through a 1D Chain of Dopant-Based Quantum Dots

Electric field and Strain-induced Band-gap Engineering and Manipulation of the Rashba Spin Splitting in Janus van der Waals Heterostructures

Ferromagnetic and Nonmagnetic 1T′ Charge Density Wave States in Transition Metal Dichalcogenides: Physical Mechanisms and Charge Doping Induced Reversible Transition

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Emergence of giant orbital Hall and tunable spin Hall effects in centrosymmetric TMDs

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping