Abstract:Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation

Purcell enhancement of silicon W centers in circular Bragg grating cavities

Programmable quantum emitter formation in silicon

Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring

Genuine and faux single G centers in carbon-implanted silicon

Laser writing of scalable single colour centre in silicon carbide

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide

Photonic integrated circuits fabricated using quantum well intermixing

All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Discovery of T center-like quantum defects in silicon

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation